Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, 2022 The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors.
Gaudencio Paz-Martínez +7 more
doaj +1 more source
Plasma mechanisms of resonant terahertz detection in two-dimensional electron channel with split gates [PDF]
, 2007 We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz radiation and control ...
A. Satou +5 more
core +3 more sources
Irritation Design: Updating Steering Theory in the Age of Governance
Politics and Governance, 2021 Is steering still a viable concept? The article answers this question with a conditional yes. On the one hand, its conceptual core remains intact. Getting others—who are considered to be idiosyncratic—to solve rather than pose societal problems is no ...
Marc Mölders
doaj +1 more source
Resonant tunnelling diode based high speed optoelectronic transmitters [PDF]
, 2017 Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation.
Al-Khalidi, Abdullah +4 more
core +2 more sources
A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors
Nanomaterials, 2019 Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors.
Feng Huang +14 more
doaj +1 more source
Enhanced photoelectric and photothermal responses on silicon platform by plasmonic absorber and omni-schottky junction [PDF]
, 2017 Recent progresses in plasmon-induced hot electrons open up the possibility to achieve photon harvesting beyond the fundamental limit imposed by band-to-band transitions in semiconductors.
Abb +47 more
core +1 more source
IEEE Access, 2019 The active layer material quality and doping profile effects on the ZnO-based thin film metal-semiconductor-metal photodiode's (MSM-PD) performance are studied using a 2-D numerical simulation.
Najeeb Al-Khalli +2 more
doaj +1 more source
Interpreting broad emission-line variations I : Factors influencing the emission-line response
, 2014 We investigate the sensitivity of the measured broad emission-line responsivity dlog f_line/dlog f_cont to continuum variations in the context of straw-man BLR geometries of varying size with fixed BLR boundaries, and for which the intrinsic emission ...
Goad, M. R., Korista, K. T.
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InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides [PDF]
, 2010 InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved.
Brouckaert, Joost +4 more
core +1 more source
Upper Bound Imposed upon Responsivity of Optical Modulators
, 2005 We study theoretically the responsivity of optical modulators. For the case of linear response we find using perturbation theory an upper bound imposed upon the responsivity.
Berry, Buks, Eyal Buks
core +1 more source