Results 11 to 20 of about 230 (201)

A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss

IEEE Open Journal of Power Electronics, 2023
This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off.
Takehiro Takahashi, Takumi Takehisa, Jun Furuta, Michihiro Shintani, Kazutoshi Kobayashi   +4 more
doaj   +4 more sources

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

IEEE Journal of the Electron Devices Society, 2022
A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Zhijia Zhao, Bo Zhang, Xiaorong Luo   +7 more
doaj   +4 more sources

Analytical Conduction Loss Calculation of a MOSFET Three-Phase Inverter Accounting for the Reverse Conduction and the Blanking Time [PDF]

IEEE Transactions on Industrial Electronics, 2021
The reverse conduction capability of MOSFETs is beneficial for the efficiency of a three-phase inverter. In this article, analytical expressions in closed form are presented which allow to quickly evaluate the conduction losses, considering the effect of the reverse conduction, and blanking time for both sinusoidal pulsewidth modulation operation with ...
Alessandro Acquaviva, Artem Rodionov, Anton Kersten   +2 more
exaly   +2 more sources

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

IEEE Access, 2023
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang   +5 more
doaj   +3 more sources

Driver optimization of high power converter based on BIGT reverse conduction loss

IET Power Electronics
Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters.
Lei Qi, Ze Li, Xiangyu Zhang, Jin Yang, Yuanfang Lu, Jingfei Wang, Fuyue Wen, Kefeng Wang, Xinyu Hu   +8 more
doaj   +2 more sources

Linear Equivalent Model for VHF Class Φ₂ Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss

IEEE Access, 2021
Reverse conduction loss of GaN high electron mobility transistors (HEMTs) in very high frequency (VHF) converters is non-neglectable due to the absence of body diode.
Desheng Zhang, Dian Lyu, Ming Zhang, Mengxue Dong, Run Min, Qiao Zhang, Qiaoling Tong, Xuecheng Zou   +7 more
doaj   +2 more sources

Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive [PDF]

Electronics, 2020
Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional
Pavel Skarolek, Filipp Frolov, Ondrej Lipcak, Jiri Lettl   +3 more
openaire   +1 more source

A Novel 6500 V SiC Trench MOSFET with Integrated Unipolar Diode for Improved Third Quadrant and Switching Characteristics

Micromachines, 2023
A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss.
Hao Wu, Xuan Li, Xiaochuan Deng, Yangyang Wu, Jiawei Ding, Wensong Peng, Bo Zhang   +6 more
doaj   +1 more source

Gate Drive Circuit Suitable for a GaN Gate Injection Transistor

IEEE Access, 2023
A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required.
Fumiya Hattori, Yuta Yanagisawa, Jun Imaoka, Masayoshi Yamamoto   +3 more
doaj   +1 more source

Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT

Micromachines, 2023
This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time.
Song Yuan, Yichong Li, Min Hou, Xi Jiang, Xiaowu Gong, Yue Hao   +5 more
doaj   +1 more source