Results 261 to 270 of about 3,886,976 (355)

Investigation of the limit conditions of SiC MOSFET body diode reverse recovery

European Conference on Cognitive Ergonomics, 2023
This work investigates the occurrences of Parasitic Turn-On and Snappy Recovery during the reverse recovery process in Silicon Carbide MOSFETs under various operating conditions.
Giuseppe Di Luca Cardillo, L. Salvo, Mario Pulvirenti, A. Sciacca, Salvatore Cascino, S. Rizzo, G. Scelba, Nunzio Salemo   +7 more
semanticscholar   +1 more source

Investigation and Reduction of EMI Noise Due to the Reverse Recovery Currents of 50/60 Hz Diode Rectifiers

IEEE Journal of Emerging and Selected Topics in Industrial Electronics, 2022
Alternating current (ac)/ Direct current (dc) power converters with dc-bus filters can achieve high power density, however, it was found in this article that the reverse recovery currents of the 50/60 Hz diode bridge can lead to significant ...
Zhedong Ma, Yiming Li, Shuo Wang, H. Sheng, Srikanth Lakshmikanthan   +4 more
semanticscholar   +1 more source

A New Approach to Model Reverse Recovery Process of a Thyristor for HVdc Circuit Breaker Testing

IEEE transactions on power electronics, 2021
In the HVdc circuit breaker testing process, a thyristor is used to generate high current for the testing purpose. However, the reverse recovery process (RRP) of a thyristor can induce a significant overvoltage problem, which jeopardizes the reliable ...
Zhonghao Dongye, Lei Qi, X. Cui, P. Qiu, F. Lu   +4 more
semanticscholar   +1 more source

Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs

IEEE Electron Device Letters, 2022
In this paper, a novel superjunction MOSFET with ohm contact in the termination region and dual Schottky contacts in the cell region is proposed and experimentally demonstrated. The dual Schottky contacts consisting of the N-type Schottky contact and the
P. Li, Rongyao Ma, Zhiyu Yang, Xin Zhang, Daili Wang, Kaifeng Tang, Jingwei Guo, S. Hu, Cong Shi, Zhi Lin, Fang Tang   +10 more
semanticscholar   +1 more source

Temperature-Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode for Switching Loss Estimation in a Half-Bridge

IEEE transactions on power electronics, 2021
In a hard switched mosfet based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary mosfets body ...
Debiprasad Nayak, Ravi Kumar Yakala, Manish Kumar, S. Pramanick   +3 more
semanticscholar   +1 more source

Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs

European Conference on Cognitive Ergonomics, 2022
The switching behavior of the high voltage (HV) SiC MOSFETs is superior to that of HV silicon IGBTs. In medium voltage high switching frequency power conversion applications, the reverse recovery effect of the body diode results in large switching losses.
Ashish Kumar, S. Bhattacharya, J. Baliga
semanticscholar   +1 more source

A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery

IEEE Transactions on Electron Devices, 2021
A multiepi (ME) superjunction (SJ) MOSFET with a lightly-doped MOS-channel diode (MCD) is studied by TCAD simulations. When the p-pillar is formed by the ME process, the resistance of the p-pillar can be much higher than that of a uniformly doped p ...
Mingmin Huang, Rui Li, Zhimei Yang, Yao Ma, Yun Li, Xi Zhang, M. Gong   +6 more
semanticscholar   +1 more source

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE Transactions on Electron Devices, 2021
A novel high-performance 1700-V 4H-Silicon carbide (SiC) junction field-effect transistor (JFET) with reverse recovery capability and low switching loss is proposed in this article.
M. Kong, Jiaxin Guo, Jiacheng Gao, Ke Huang, Bingke Zhang, Bin Wang   +5 more
semanticscholar   +1 more source

Recovery of Recombinant Rotaviruses by Reverse Genetics

2023
Rotaviruses are the primary cause of severe gastroenteritis in infants and young children throughout the world. To combat rotavirus illness, several live oral vaccines have been developed, or are under development, that are formulated from attenuated human or human-animal reassortant strains of rotavirus.
Chantal A, Agbemabiese, Asha A, Philip, John T, Patton   +2 more
openaire   +2 more sources

Reversible Recovery of Nanoimprinted Polymer Structures

Langmuir, 2013
A shape memory polymer, Nafion, has its shape memory simultaneously programmed and patterned with micro- and nanometer-scale surface textures using a nanoimprint process. Highly ordered and well-defined micro- and nanometer surface textures, for example, high aspect ratio (~5) micropillars, form the permanent shape memory of the Nafion films.
Tanu Suryadi, Kustandi, Wei Wei, Loh, Lu, Shen, Hong Yee, Low   +3 more
openaire   +2 more sources