Results 221 to 230 of about 16,611 (244)

Thermometry of Filamentary RRAM Devices

IEEE Transactions on Electron Devices, 2015
Since thermal effects play a major role in filamentary RRAM devices, we compare the two localized thermometry methods developed for such devices. One method is based on short-pulsed measurements and the other on the measurement of minority-carrier injection from the filament into a semiconductor electrode by thermionic emission.
Eilam Yalon, Abhishek A. Sharma, Marek Skowronski, James A. Bain, Dan Ritter, Ilya V. Karpov   +5 more
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RRAM-Based Analog Approximate Computing

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2015
Approximate computing is a promising design paradigm for better performance and power efficiency. In this paper, we propose a power efficient framework for analog approximate computing with the emerging metal-oxide resistive switching random-access memory (RRAM) devices.
Boxun Li, Peng Gu, Yi Shan, Yu Wang, Yiran Chen, Huazhong Yang   +5 more
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Resistance switching for RRAM applications

Science China Information Sciences, 2011
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, allowing new NVM applications in a variety of markets (automotive, embedded, storage, RAM).
Frederick T. Chen, HengYuan Lee, YuSheng Chen, YenYa Hsu, LiJie Zhang, PangShiu Chen, WeiSu Chen, PeiYi Gu, WenHsing Liu, SuMin Wang, ChenHan Tsai, ShyhShyuan Sheu, MingJinn Tsai, Ru Huang   +13 more
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Resistance Non-volatile Memory – RRAM

MRS Proceedings, 2007
AbstractElectric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM).
Alex Ignatiev, Naijuan Wu, Xin Chen, Yibo Nian, Christina Papagianni, Shangqing Liu, John Strozier   +6 more
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RRAM reliability discussion group summary

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014
Operating principles and physical mechanisms, variability and reliability of resistive random access memory (RRAM), limiting factors and future trends in RRAM technology were discussed in the group. Flash memory, the primary type of nonvolatile memory in use today, has a number of problems with die scaling and with an increase of the memory capacity ...
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RRAM Solutions for Stochastic Computing

2019
Stochastic computing is a low-cost form of computing. To perform stochastic computing, inputs need to be converted to stochastic bit streams using stochastic number generators (SNGs). The random number generation presents a significant overhead, which partially defeats the benefits of stochastic computing.
Phil Knag, Siddharth Gaba, Wei Lu, Zhengya Zhang   +3 more
openaire   +1 more source

RRAM-Based Hardware Security Primitives

2017
This chapter focuses on the hardware security primitives based on resistive random access memory (RRAM) technology. The typical RRAM device structure is a metal/oxide/metal stack, which can be integrated in the contact vias between interconnect layers on top of the complementary-metal-oxide-semiconductor circuits.
Shimeng Yu, Xiaoyu Sun, Rui Liu, Huaqiang Wu, Yachuan Pang, Bin Gao, He Qian, An Chen   +7 more
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C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations

2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022
Yifan He, Yuxuan Huang, Jinshan Yue, Wenyu Sun, Lu Zhang, Yongpan Liu   +5 more
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RRAM, Device, Model and Memory

2022 International Conference on Microelectronics (ICM), 2022
Abdulaziz Alshaya, Qihao Han, Christos Papavassiliou   +2 more
openaire   +1 more source

RRAM-enabled AI Accelerator Architecture

2021 IEEE International Electron Devices Meeting (IEDM), 2021
Xinxin Wang, Yuting Wu, Wei D. Lu
openaire   +1 more source