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Online Fault Detection and Diagnosis in RRAM

2023 IEEE European Test Symposium (ETS), 2023
Resistive Random Access Memory (RRAM, or ReRAM) is a promising memory technology to replace Flash because of its low power consumption, high storage density, and simple integration in existing IC production processes. This has motivated many companies to invest in this technology. However, RRAM manufacturing introduces new failure mechanisms and faults
Moritz Fieback   +3 more
openaire   +2 more sources

RRAM switching mechanism

Symposium Non-Volatile Memory Technology 2005., 2006
The property of PCMO RRAM memory resistors have been studied in terms of electrical pulse width, temperature dependent of resistance, trap state, and electrode effects. The PCMO material is deposited using MOD, PVD, or PLD process. The MOD PCMO is a small grain polycrystal material.
S.T. Hsu   +6 more
openaire   +1 more source

A Study of the Effect of RRAM Reliability Soft Errors on the Performance of RRAM-Based Neuromorphic Systems

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2017
Resistive RAM (RRAM) device has been extensively used as a scalable nonvolatile memory cell in neuromorphic systems due to its several advantages, including its small size and low-power requirements. However, resulting from the stochastic nature of the oxygen vacancies, the RRAM device suffers from reliability soft errors. In this paper, we provide for
Amr M. S. Tosson   +3 more
openaire   +1 more source

FPGA Based on Integration of CMOS and RRAM

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2011
In this paper, a novel CMOS-nano hybrid reconfigurable field-prgrammable gate array architecture (rFPGA) is introduced based on resistive memory (RRAM) devices. Different from the existing crossbar-based CMOS-nano architectures, rFPGA consists of mainly 1T1R RRAM structures that can be fabricated by using a CMOS-compatible process.
Sansiri Tanachutiwat   +2 more
openaire   +1 more source

Towards Automotive Grade Embedded RRAM

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018
Most types of resistive RAM (RRAM) explored over the past 20 years have suffered from reliability problems. As a result, RRAM has received relatively little consideration for use in automotive applications. The present article describes an improved subquantum Conductive Bridging RAM (CBRAMĀ®) cell whose reliability appears robust enough for automotive ...
John R. Jameson   +12 more
openaire   +1 more source

Microscopic KMC Modeling of Oxide RRAMs

2019
We investigate the microscopic behavior of oxide-based resistive random-access memory (RRAM) cells by using a unique three-dimensional (3D) physical simulator. RRAMs are attracting substantial attention and are considered as the next generation of non-volatile memory technologies.
Toufik Sadi, Asen Asenov
openaire   +1 more source

Device and SPICE modeling of RRAM devices

Nanoscale, 2011
We report the development of physics based models for resistive random-access memory (RRAM) devices. The models are based on a generalized memristive system framework and can explain the dynamic resistive switching phenomena observed in a broad range of devices. Furthermore, by constructing a simple subcircuit, we can incorporate the device models into
Patrick, Sheridan   +5 more
openaire   +2 more sources

An RRAM-based MLC design approach

Microelectronics Journal, 2017
RRAM is an emerging technology with vast applications in computation and storage. RRAM with MLC capabilities is more interesting owing to its higher storage density. In this study, we proposed an approach for RRAM-based MLC design. The approach starts with capacitor-based quantization of electric charge applying to RRAM.
Aliasghar Bagheri-Soulla   +1 more
openaire   +1 more source

Binary convolutional neural network on RRAM

2017 22nd Asia and South Pacific Design Automation Conference (ASP-DAC), 2017
Recent progress in the machine learning field makes low bit-level Convolutional Neural Networks (CNNs), even CNNs with binary weights and binary neurons, achieve satisfying recognition accuracy on ImageNet dataset. Binary CNNs (BCNNs) make it possible for introducing low bit-level RRAM devices and low bit-level ADC/DAC interfaces in RRAM-based ...
Tianqi Tang 0001   +4 more
openaire   +1 more source

RRAM-based TCAMs for pattern search

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Content Addressable Memory (CAM) is beneficial to applications that require high-speed pattern searching as it provides fast associative lookup operations. As the amount of data to search continues to grow, reducing power consumption while minimizing the costs for speed and area is the main thread of research in designing large capacity CAMs.
Le Zheng   +5 more
openaire   +1 more source

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