Results 21 to 30 of about 61,702 (200)
IEEE Journal of the Electron Devices Society, 2018 In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
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Human Breast Cancer Cells Demonstrate Electrical Excitability
Frontiers in Neuroscience, 2020 Breast cancer is one of the most prevalent types of cancers worldwide and yet, its pathophysiology is poorly understood. Single-cell electrophysiological studies have provided evidence that membrane depolarization is implicated in the proliferation and ...
Mafalda Ribeiro +7 more
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Audiology Research, 2021 Recent research has established a connection between hearing aid (HA) users’ cognition and speech recognition performance with short and long compression release times (RT).
Jingjing Xu, Robyn M. Cox
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Adobe Flash as a medium for online experimentation: a test of reaction time measurement capabilities [PDF]
, 2007 Adobe Flash can be used to run complex psychological experiments over the Web. We examined the reliability of using Flash to measure reaction times (RTs) using a simple binary-choice task implemented both in Flash and in a Linux-based system known to ...
N. Stewart +9 more
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A Low Complexity Reactive Tabu Search Based Constellation Constraints in Signal Detection
Algorithms, 2018 For Massive multiple-input multiple output (MIMO) systems, many algorithms have been proposed for detecting spatially multiplexed signals, such as reactive tabu search (RTS), minimum mean square error (MMSE), etc.
Jiao Feng +3 more
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Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
IEEE Journal of the Electron Devices Society, 2015 Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj +1 more source
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
Havard, E. +2 more
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The Optimal Determination of the Truncation Time of Non-Exponential Sound Decays
Buildings, 2022 The noise effects in the room impulse response (RIR) make the decay range of the integrated impulse response insufficient for reliable determination of reverberation time (RT).
Min Chen, Chang-Myung Lee
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Hearing in Noise Test in Subjects With Conductive Hearing Loss
Journal of the Formosan Medical Association, 2009 It has been reported that patients with pure conductive hearing loss (CHL) have remarked that their hearing is better in the presence of background noise.
Duen-Lii Hsieh +3 more
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De-Noising Process in Room Impulse Response with Generalized Spectral Subtraction
Applied Sciences, 2021 The generalized spectral subtraction algorithm (GBSS), which has extraordinary ability in background noise reduction, is historically one of the first approaches used for speech enhancement and dereverberation. However, the algorithm has not been applied
Min Chen, Chang-Myung Lee
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