Results 11 to 20 of about 1,747,864 (273)
Distortion of boundary sets under inner functions and applications [PDF]
, 1992 10 pages, no figures.-- MSC2000 codes: 30C85, 30D50.MR#: MR1183352 (93k:30014)Zbl#: Zbl 0765.30011An inner function is a bounded holomorphic function from the unit disc $\Delta$ of the complex plane such that the radial boundary values have modulus 1 a.e.
Fernández, José L., Pestana, Domingo
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Yankuang ceshi, 2015 Hydride Generation (HG) combined with Inductively Coupled Plasma-Optical Emission Spectrometry (ICP-OES) has excellent analytical sensitivity. However, the instable chemical reactions of HG may cause unsatisfactory analytical precision.
WU Zheng, XIONG Ying, WANG Long-shan
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Highly conductive Sb-doped layers in strained Si [PDF]
, 2006 The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As ...
A. J. Smith +11 more
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Surface brightness measurements for APM galaxies [PDF]
, 2002 This paper considers some simple surface brightness (SB) estimates for galaxies in the Automated Plate Measuring Machine (APM) catalogue in order to derive homogeneous SB data for a very large sample of faint galaxies.
Coles, P. +3 more
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Primary: Jurnal Pendidikan Guru Sekolah Dasar, 2015 27th January 2012 Higher Education General Directorates (ditjen dikti) Education ministry and Republic Of Indonesia culture publish form letter that comprising about scientific publication liabilities as requisite of pass programs master, magister, and ...
Nugraheti Sismulyasih Sb Sismulyasih Sb
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Research Progress on Sb Geochemistry and Sb Isotopes
Yankuang ceshi, 2016 Antimony (Sb) has been widely used in products such as fire retardants, glass, rubber, paint, ceramics and semiconductors. It is found throughout igneous rocks but can be enriched in sedimentary rocks such as abysmal clays, shales and clastic rocks.
MENG Yu-miao +4 more
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Electrical phase change of CVD-grown Ge-Sb-Te thin film device [PDF]
, 2011 A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour
B. Gholipour +6 more
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Beta-delayed-neutron studies of $^{135,136}$Sb and $^{140}$I performed with trapped ions [PDF]
, 2019 Beta-delayed-neutron ($\beta$n) spectroscopy was performed using the Beta-decay Paul Trap and an array of radiation detectors. The $\beta$n branching ratios and energy spectra for $^{135,136}$Sb and $^{140}$I were obtained by measuring the time of flight
Alan, B. S. +21 more
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Scientific Reports, 2021 $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions.
A. Bafekry +8 more
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Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$
, 2005 We have measured the electrical resistivity, thermoelectric power, Hall coefficient, and magnetoresistance (MR) on single crystals of PrOs$_{4}$Sb$_{12}$, LaOs$_{4}$Sb$_{12}$ and NdOs$_{4}$Sb$_{12}$.
H. Harima +16 more
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