Results 181 to 190 of about 2,307,771 (247)
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Exploring partially reduced CeO 2 (111) surface at the atomic scale using scanning probe microscopy. [PDF]
Kim K, Abe M, Kawai S, Custance O.
europepmc +1 more source
Multi-Channel Exploration of O Adatom on TiO2(110) Surface by Scanning Probe Microscopy. [PDF]
Wen HF, Sugawara Y, Li YJ.
europepmc +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
AI-Equipped Scanning Probe Microscopy for Autonomous Site-Specific Atomic-Level Characterization at Room Temperature. [PDF]
Diao Z +5 more
europepmc +1 more source
A soft, dual‐channel hydrogel patch enables simultaneous detection of wound temperature and strain by integrating ion‐diffusion‐mediated thermoelectric and resistive sensing. The conformal design maintains stable performance during motion, capturing subtle inflammatory and mechanical changes for continuous wound monitoring.
Yu Fang +7 more
wiley +1 more source
Precise Large-Scale Chemical Transformations on Surfaces: Deep Learning Meets Scanning Probe Microscopy with Interpretability. [PDF]
Wu N +11 more
europepmc +1 more source
Atomic defect classification of the H-Si(100) surface through multi-mode scanning probe microscopy. [PDF]
Croshaw J, Dienel T, Huff T, Wolkow R.
europepmc +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source

