Results 101 to 110 of about 454,935 (314)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Bound states of defects in superconducting LiFeAs studied by scanning tunneling spectroscopy [PDF]

open access: yes, 2012
Defects in LiFeAs are studied by scanning tunneling microscopy (STM) and spectroscopy (STS). Topographic images of the five predominant defects allow the identification of their position within the lattice. The most commonly observed defect is associated
S. Grothe   +7 more
semanticscholar   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

open access: yesAdvanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim   +3 more
wiley   +1 more source

Adsorption, Single‐Molecule Manipulation, and Self‐Assembly of Borazine on Ag(111)

open access: yesAdvanced Materials Interfaces
The interaction of borazine with metal supports and the concomitant surface chemistry play important roles in the synthesis of hexagonal boron nitride and the assembly of BN‐doped carbon nanostructures, thus making adsorbed borazine an intriguing model ...
Tobias Weiss   +6 more
doaj   +1 more source

A theoretical model for single molecule incoherent scanning tunneling spectroscopy

open access: yes, 2008
Single molecule scanning tunneling spectroscopy (STS), with dephasing due to elastic and inelastic scattering, is of some current interest. Motivated by this, we report an extended Huckel theory (EHT) based mean-field Non-equilibrium Green's function ...
Datta S   +4 more
core   +1 more source

Scanning Tunneling Microscopy Characterization of the Electrical Properties of Wrinkles in Exfoliated Graphene Monolayers [PDF]

open access: yes, 2009
We report on the scanning tunneling microscopy study of a new class of corrugations in exfoliated monolayer graphene sheets, that is, wrinkles ~10 nm in width and ~3 nm in height.
Cao, Peigen, Heath, James R., Xu, Ke
core   +2 more sources

Shape‐Controlled Guanine Self‐Assemblies for Stable and Fast‐Ion Solid–Electrolyte Interphases in Sustainable Li Metal Batteries

open access: yesAdvanced Functional Materials, EarlyView.
The shape of guanine self‐assemblies is tuned by introducing alkyl (G8), fluoroalkyl (G8f), and oligoether (G8g) side chains into the G moiety. The scanning tunneling microscopy results and calculations show that the presence and type of the side chain strongly affect the G self‐assembly network.
So‐Huei Kang   +9 more
wiley   +1 more source

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

open access: yesAdvanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon   +4 more
wiley   +1 more source

Native defects in ultra-high vacuum grown graphene islands on Cu(111)

open access: yes, 2015
We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111).
Gambrel, G. A.   +6 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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