Results 131 to 140 of about 58,719 (283)

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

Advanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu, Matthew K. Burgess, Catarina Franco Jones, Marzia Iarossi, Manuel Schröter, Nako Nakatsuka, Mustafa B. A. Djamgoz, Gil Gonçalves, Sidahmed Abayzeed, Paola Sanjuán‐Alberte, Paula M. Mendes, Frankie J. Rawson, Malavika Nair, Michael Levin, Rosalia Moreddu   +14 more
wiley   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

Advanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan, Michael Stöger‐Pollach, Georg Pfusterschmied, Ulrich Schmid   +3 more
wiley   +1 more source

Why scanning tunneling spectroscopy of Sr2RuO4 sometimes doesn’t see the superconducting gap

npj Quantum Materials
Scanning tunneling spectroscopy (STS) and scanning tunneling microscopy (STM) are perhaps the most promising ways to detect the superconducting gap size and structure in the canonical unconventional superconductor Sr2RuO4 directly. However, in many cases,
Adrian Valadkhani, Jonas B. Profe, Andreas Kreisel, P. J. Hirschfeld, Roser Valentí   +4 more
doaj   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

Advanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen, Gustavo A. Alvarez, Jeffrey Z. Kaaret, Patrick Soucy, Amir F. Amhaz, Jeffrey Moses, Kenneth R. Beyerlein, Nicole A. Benedek, Zhiting Tian, Ankit S. Disa   +9 more
wiley   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source

Extreme‐Temperature Resistant, Flexible, and Sensitive Strain Sensor for Aerospace Parachute Deployment

Advanced Materials Technologies, EarlyView.
In this study, we report a resistive‐type strain sensor fabricated using single‐walled CNTs, are used layer using the pray technique to deposit as conductive, and UV‐resin was spin‐coated as a protection layer. The sensor functioned in harsh temperature variation conditions from −50°C to 125°C without deterioration.
Jagan Singh Meena, Lucas Lum Yu Xiang, Dhivya Dharshini Kannan, Chun Fei Siah, Yeow Kheng Lim   +4 more
wiley   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source

Electronic transport in planar atomic-scale structures measured by two-probe scanning tunneling spectroscopy. [PDF]

Nat Commun, 2019
Kolmer M, Brandimarte P, Lis J, Zuzak R, Godlewski S, Kawai H, Garcia-Lekue A, Lorente N, Frederiksen T, Joachim C, Sanchez-Portal D, Szymonski M.   +11 more
europepmc   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Quantum dots on the InAs(110) cleavage surface created by atom manipulation

Physical Review Research
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface.
Van Dong Pham, Yi Pan, Steven C. Erwin, Stefan Fölsch   +3 more
doaj   +1 more source