Results 251 to 260 of about 2,042,987 (291)

Scanning Tunneling Spectroscopy

SPIE Proceedings, 1988
Scanning tunneling microscopy (STM) provides a means of directly imaging surface topography with atomic scale resolution. Scanning tunneling spectroscopy (STS) usually refers to the image-wise determination of the tunnel current variation with bias voltage for fixed tunnel gap width.
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Scanning tunneling spectroscopy on Si

Ultramicroscopy, 1988
Abstract An overview is given of various methods for applying tunneling microscopy to obtain information on the electronic structure of surfaces. Results are presented for clean Si(111)7×7 and for a Si(111)7×7 surface on which 1 3 monolayer Ag was deposited.
H. Neddermeyer, St. Tosch
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Scanning Tunneling Microscopy/Spectroscopy of Nanostructures

physica status solidi (a), 2001
The development of low-temperature scanning tunneling microscopes (STM) operating under ultrahigh vacuum conditions has provided new opportunities for investigating locally the electronic and magnetic structure at surfaces. Three examples are chosen from our laboratory, which illustrate the power and the potential of this local approach.
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Scanning tunneling microscopy and spectroscopy

Uspekhi Fizicheskih Nauk, 1988
Scanning tunneling microscopy (STM) is a recent surface imaging technique discovered and put forward in 1982 by Binnig, Rohrer, Gerber and Weibel1. Their achievement was recognised in a short period of time by many prizes culminating in the Nobel Prize for Physics in 1986. Here we employ the acronym STM to denote either scanning tunneling microscopy or
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Scanning Tunneling Spectroscopy

1993
Abstract By interrupting the feedback loop and keeping the tunneling gap constant and applying a voltage ramp on the tunneling junction, the tunneling current as a function of bias provides information that is the convolution of the tip DOS and the sample DOS. It is an extension of the tunneling junction experiment (Giaever, 1960, 1960a;
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Scanning tunneling spectroscopy of Bi2Sr2CaCu2O8+

Physica C: Superconductivity, 1998
Abstract Cleaved surfaces of Bi 2 Sr 2 CaCu 2 O 8+ δ ( T c =86 K) have been investigated by low temperature scanning tunneling spectroscopy. The clean surface has been prepared by cleaving the sample at liquid helium temperature in a vacuum. The intrinsic superconducting density of states has been obtained in the tunneling spectra exhibiting a ...
S. Kaneko, N. Nishida, T. Mochiku, K. Kadowaki   +3 more
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Scanning Tunneling Spectroscopy

2005
Scanning tunneling spectroscopy (STS) and its extension, the spin-polarized scanning tunneling spectroscopy (SPSTS), reveal basic information on the spatial distribution of electron systems. STS measures the local density of states given by the sum over squared single-particle wave functions at a chosen energy, while SPSTS detects the spatial ...
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Scanning tunneling spectroscopy on Bi2SrCaCuO6+

Physica C: Superconductivity and its Applications, 2010
Abstract Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) measurements were performed on Bi2SrCaCuO6 whose superconducting transition temperature Tc is about 80 K. The superconducting gap obtained by the STS measurements was found to be about 40 meV. This value is close to that of optimally doped Bi2Sr2CaCu2O8 which has similar
H. Sakata, T. Sakuyama, T. Kato
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Scanning Tunneling Spectroscopy

2018
Spectroscopic measurement performed with STM, referred to as scanning tunneling spectroscopy (STS), provides information proportional to the local density of states (LDOS), the number of states per unit energy, of the sample surface. The STS measurement is usually made by positioning the STM tip over a target feature of a surface, deactivating the ...
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Scanning tunneling microscopy and (scanning) tunneling spectroscopy on stepped Ni(111)/H

Surface Science, 1987
Topographic and electronic properties of both the (111) flat surface and atomic steps of nickel have been measured with scanning tunneling microscopy (STM) and (scanning) tunneling spectroscopy in UHV. Micrographs of the (111) plane show a hexagonal pattern with a dimension of two times the unit structure and a corrugation of 1 A which increases ...
G.F.A. van de Walle, H. Van Kempen, P. Wyder, C.J. Flipse   +3 more
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