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Graphene/Si Schottky diodes [PDF]
, 2016 We etched a n-Si wafer to form arrays of Si-nanotips emerging from a SiO2 layer on which we transferred CVD grown monolayer graphene. We measured the electrical characteristics of the junction and found a rectifying behavior with On/Off ratio increasing with decreasing temperature and at room temperature higher than 1.5·102 at ±0.5V.
Luongo, Giuseppe +6 more
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Microwave Schottky Barrier Diodes
1984Point contact diodes have been in use for many decades for mixer and detector application from uhf through millimeter-wave frequencies. The first published paper on the subject appeared in 1874 when Braun reported the asymmetrical nature of conduction between metal points and crystals. Point contacts are relatively unsophisticated devices consisting of
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1992
Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Schottky barriers and pn-junctions are the simplest active solid state devices. Their rectifying characteristics as well as the ability to expand or contract their space charge layer with bias is useful in many applications. With appropriate material and doping design, a wide variety of desirable operating characteristics can be obtained.
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Design of the Synergistic Rectifying Interfaces in Mott–Schottky Catalysts
Chemical Reviews, 2023Xu Dong, Jie-Sheng Chen, Xin-Hao Li
exaly
1982
Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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Power can be efficiently converted from the mains to low voltage, high current, d.c. in the switched mode power supply. The output stages require low voltage, fast diodes to minimize the losses. Reverse recovery times of 30 ns, and reverse voltages of 200 V can be achieved by replacing the double-diffused structure with an epitaxial one.
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1993
The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
openaire +1 more source
The use of metal-semiconductor diodes for detection was probably the first operational use of semiconductors. In 1874, Ferdinand Braun made a detector composed of a piece of galena (lead sulphide) and a metallic contact. As is well known, such devices have been extensively used for the same purpose in the simple radio receivers used in the beginning of
openaire +1 more source