Results 141 to 150 of about 947,691 (350)
The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati+7 more
wiley +1 more source
The orbital‐current‐induced torque is investigated as an efficient method for controlling magnetization direction. By introducing Ti as an orbital current source in Ti/Ta (or Pt)/CoFeB/MgO structures, the switching current is reduced by ∼25% compared to a conventional spin‐orbit torque structure of Ta/CoFeB/MgO.
So y. Shin+3 more
wiley +1 more source
Optical Properties of Lead-Salt and III–V Semiconductors [PDF]
Frank Stern
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High‐Entropy Magnetism of Murunskite
The study of murunskite (K2FeCu3S4) reveals that its magnetic and orbital order emerges in a simple I4/mmm crystal structure with complete disorder in the transition metal positions. Mixed‐valence Fe ions randomly occupy 1/4 of the tetrahedral sites, with the remaining 3/4 being filled by non‐magnetic Cu+ ions.
Davor Tolj+18 more
wiley +1 more source
THEORY OF NOISE IN A MULTIDIMENSIONAL SEMICONDUCTOR WITH A P-N JUNCTION
Max Solow
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Double Injection in Deep-Lying Impurity Semiconductors [PDF]
K. L. Ashley, A. G. Milnes
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Plasmonic hybridization enables control of light emission in 2D van der Waals heterojunctions. By stacking multilayer GaSe and monolayer MoS2 on a silver film, light emission is enhanced at the edges due to plasmonic effects. In the center, where these effects are absent, charge transfer led to reduced light emission.
Jung Ho Kim+5 more
wiley +1 more source
BIBLIOGRAPHY ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS
J. L. Blankenship
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THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONS [PDF]
G. H. Parker, Carver Mead
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