Results 41 to 50 of about 986,480 (326)

Removing Homocoupling Defects in Alkoxy/Alkyl‐PBTTT Enhances Polymer:Fullerene Co‐Crystal Formation and Stability

Advanced Functional Materials, EarlyView.
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu, Jochen Vanderspikken, Paola Mantegazza, Stefania Moro, Mouna Hamid, Sigurd Mertens, Niko Van den Brande, Laurence Lutsen, Vincent Lemaur, David Beljonne, Giovanni Costantini, Koen Vandewal, Bruno Van Mele, Wouter Maes, Bart Goderis   +14 more
wiley   +1 more source

CH₃SH and H₂S Sensing Properties of V₂O₅/WO₃/TiO₂ Gas Sensor

Chemosensors, 2021
Resistive-type semiconductor-based gas sensors were fabricated for the detection of methyl mercaptan and hydrogen sulfide. To fabricate these sensors, V2O5/WO3/TiO2 (VWT) particles were deposited on interdigitated Pt electrodes.
Takafumi Akamatsu, Toshio Itoh, Akihiro Tsuruta, Yoshitake Masuda   +3 more
doaj   +1 more source

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask [PDF]

, 1986
A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank.
Daud, Taher, Morrison, Andrew D.
core   +1 more source

D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface

, 2010
The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained.
Avetisyan, A. A., Djotyan, A. P., Hao, Y. L., Peeters, F. M.   +3 more
core   +1 more source

Nano‐Patterned CuO Nanowire Nanogap Hydrogen Gas Sensor with Voids

Advanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
Sub‐5‐ppb hydrogen (H2) detection and sub‐10‐s response and recovery times are achieved based on nano‐patterned polycrystalline CuO nanowires nanogap gas sensors with voids using electron‐beam lithography and unique annealing processes. Pre‐H2 annealing, void‐generating oxidation, and downscaled nanogap electrodes are key to improving the sensing ...
Muqing Zhao, Ryosuke Nitta, Seiichiro Izawa, Jun‐ichi Yamaura, Yutaka Majima   +4 more
wiley   +1 more source

Crystal structure, dielectric, ferroelectric and energy storage properties of La-doped BaTiO3 semiconducting ceramics [PDF]

Journal of Advanced Dielectrics, 2015
Polycrystalline La-doped BaTiO3 (Ba(1-x)Lax TiO3) [x=0,0.0005,0.001,0.003] ceramics (denoted as BTO,BLT1,BLT2,BLT3) were synthesized by conventional solid-state reaction method and characterized by X-ray diffraction (XRD), scanning electron microscopy ...
Venkata Sreenivas Puli, Patrick Li, Shiva Adireddy, Douglas B. Chrisey   +3 more
doaj   +1 more source

Oligothiophene-Naphthalimide Hybrids Connected through Rigid and Conjugated Linkers in Organic Electronics: An Overview

Electronic Materials, 2021
In this article, we summarize the synthetic approaches developed in our research groups during the last decade to efficiently tune the optical, electrochemical and morphological characteristics of oligothiophene–naphthalimide assemblies.
Matías J. Alonso-Navarro, Elena Gala, M. Mar Ramos, Rocío Ponce Ortiz, José L. Segura   +4 more
doaj   +1 more source

Localization of superlattice electronic states and complex bulk band structures [PDF]

, 1980
The relative lineup of the band structures of the two constituents of a semiconductor superlattice can cause charge carriers to be confined. This occurs when the energy of a superlattice state is located in an allowed energy region of one of the ...
McGill, T. C., Schulman, J. N.
core  

COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES

Le Journal de Physique Colloques, 1990
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
openaire   +1 more source

In‐Situ Growth of 2D MOFs as a Molecular Sieving Layer on SnS2 Nanoflakes for Realizing Ultraselective H2S Detection

Advanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
The ultraselective H2S detection of the ZIF‐L/SnS2 heterostructure is demonstrated. The introduction of 2‐dimensional (2D) breathable ZIF‐L results in a substantial increase in H2S selectivity attributable to the molecular sieving effect, which impedes the permeation of gases with large kinetic diameters and high polarity.
Soo Min Lee, Yeong Jae Kim, Seon Ju Park, Woo Seok Cheon, Jaehyun Kim, Gi Baek Nam, Youngeun Kim, Ho Won Jang   +7 more
wiley   +1 more source