Results 61 to 70 of about 947,691 (350)

Removing Homocoupling Defects in Alkoxy/Alkyl‐PBTTT Enhances Polymer:Fullerene Co‐Crystal Formation and Stability

Advanced Functional Materials, EarlyView.
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu, Jochen Vanderspikken, Paola Mantegazza, Stefania Moro, Mouna Hamid, Sigurd Mertens, Niko Van den Brande, Laurence Lutsen, Vincent Lemaur, David Beljonne, Giovanni Costantini, Koen Vandewal, Bruno Van Mele, Wouter Maes, Bart Goderis   +14 more
wiley   +1 more source

Test of Bell's Inequality using the Spin Filter Effect in Ferromagnetic Semiconductor Micro-structures

, 2000
A theoretical proposal for testing Bell's inequality in mesoscopic systems is presented. We show that the entanglement of two electron spins can be detected in the spin filter effect in the mesoscopic semiconductor / ferromagnetic semiconductor ...
Aspect A., Aspect A., Bell J. S., Bennet C. H., Burkard G., Burkard G., Burkard G., Büttiker M., Büttiker M., Choi M-S., Clauser J. F., Clauser J. F., Ekert A., Greenberger D., Hao X., Henny M., Hu X., Ionicioiu R., Kikkawa J. M., Kwiat P. G., Liu R., Loss D., Loss D., Meservey R., Moodera J. S., Moodera J. S., Oliber W., Prinz G. A., Recher P., Schliemann J., Scully M. O., Steane A.   +31 more
core   +1 more source

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

IEEE Journal of the Electron Devices Society
The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can overcome limitations in complicated circuit design and power ...
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki   +5 more
doaj   +1 more source

Obtenção de filmes espessos de seleneto de cobre sobre carbono vítreo, ouro, titânio e cobre Obtaining copper selenide thick films on vitreous carbon, gold, titanium and copper

Química Nova, 2007
Copper selenide (berzelianite) films were prepared on the title substrates using the chemical bath deposition technique (CBD). Film composition was determined by energy dispersion of x-rays.
Adriano César Rabelo, Tatiane Moraes Arantes, Otávio Luiz Bottecchia   +2 more
doaj   +1 more source

Photo‐Assisted Zn‐Iodine Battery via Bifunctional Cathode with Iodine Host and Solar Response Boost

Advanced Functional Materials, EarlyView.
A bifunctional cathode based on BiOI materials is developed for photo‐assisted Zn‐iodine batteries, serving as both an iodine host and a solar‐responsive material. This design enables dual reaction routes involving vacancy‐based iodine storage and reversible two steps iodine redox.
Hai Xu, Wanli Gao, Hui Dou, Xiaogang Zhang, Martin Pumera   +4 more
wiley   +1 more source

Method for growing low defect, high purity crystalline layers utilizing lateral overgrowth of a patterned mask [PDF]

, 1986
A method for growing a high purity, low defect layer of semiconductor is described. This method involves depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank.
Daud, Taher, Morrison, Andrew D.
core   +1 more source

The effects of interface morphology on Schottky barrier heights: a case study on Al/GaAs(001)

, 1997
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any structural ...
A. Ruini, C. Berthod, H.J. Monkhorst, J. Bardi, J. Tersoff, K. Kunc, M. Methfessel, M. Peressi, M. van Schilfgaarde, M. van Schilfgaarde, R. Pick, R. Resta, R. Resta, R.G. Dandrea, R.J. Needs, S. Baroni, S. de Gironcoli, W. Mönch, X. Gonze   +18 more
core   +1 more source

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Advanced Science, 2023
Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation.
Jun Hwan Moon, Eunjin Jeong, Seunghyun Kim, Taesoon Kim, Eunsoo Oh, Keun Lee, Hauk Han, Young Keun Kim   +7 more
doaj   +1 more source

Nano‐Patterned CuO Nanowire Nanogap Hydrogen Gas Sensor with Voids

Advanced Functional Materials, Volume 35, Issue 12, March 18, 2025.
Sub‐5‐ppb hydrogen (H2) detection and sub‐10‐s response and recovery times are achieved based on nano‐patterned polycrystalline CuO nanowires nanogap gas sensors with voids using electron‐beam lithography and unique annealing processes. Pre‐H2 annealing, void‐generating oxidation, and downscaled nanogap electrodes are key to improving the sensing ...
Muqing Zhao, Ryosuke Nitta, Seiichiro Izawa, Jun‐ichi Yamaura, Yutaka Majima   +4 more
wiley   +1 more source

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

, 2009
We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC).
A. F. Hebard, Neamen D. A., S. Tongay, Sze S. M., T. Schumann   +4 more
core   +1 more source