Results 81 to 90 of about 947,691 (350)

D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface

open access: yes, 2010
The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained.
Avetisyan, A. A.   +3 more
core   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach

open access: yes, 2011
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the ...
Abramowitz M.   +8 more
core   +1 more source

Harnessing Outer Space for Improved Electrocaloric Cooling

open access: yesAdvanced Functional Materials, EarlyView.
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo   +8 more
wiley   +1 more source

Off‐Stoichiometry Engineering of the Electrical and Optical Properties of SrNbO3 Using Oxide Molecular Beam Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
The plasma edge of transparent conducting oxide SrNbO3 shifts from ∼2 eV in the visible range to 1.37 eV in the near‐infrared region by off‐stoichiometry using the vacancy sites as quasi‐substitutional virtual elements. This work advances the stoichiometry engineering of perovskite oxides using oxide molecular beam epitaxy, allowing synthesis beyond ...
Jasnamol Palakkal   +11 more
wiley   +1 more source

Interfacial Contact Engineering Enables Giant‐Performance Semiconductor Nanomembrane Optoelectronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This work investigates modifying interfacial contacts in realizing giant‐performance semiconductor nanomembrane optoelectronics. Strategies, including surface reaction and buffer layer work‐function modulation, are explored to boost the Schottky barrier. An emerging material of YbOx is utilized for near‐ideal Ohmic contact.
Yibo Zhang   +5 more
wiley   +1 more source

Sub-Kelvin resistance thermometer [PDF]

open access: yes, 1992
A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting ...
Castles, Stephen H.
core   +1 more source

Making Photoresponsive Metal–Organic Frameworks an Effective Class of Heterogeneous Photocatalyst

open access: yesAdvanced Functional Materials, EarlyView.
This review summarizes photoresponsive MOFs for photocatalytic applications, focusing on their capacity to enhance light harvesting, charge transfer, and surface reactions. While existing studies provide foundational insights, emerging characterization techniques enable a deeper understanding of photoresponsive MOFs.
Rui Liu   +3 more
wiley   +1 more source

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$

open access: yes, 2017
Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal ...
Bianchi, Marco   +8 more
core   +1 more source

Semicondutores heteroestruturados: uma abordagem sobre os principais desafios para a obtenção e aplicação em processos fotoquímicos ambientais e energéticos

open access: yesQuímica Nova
Heterostructured semiconductors are materials with unique features formed by combination of two or more semiconductors with suitable interface between them.
Romero T. Bueno   +4 more
doaj   +1 more source

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