Results 81 to 90 of about 947,691 (350)
D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface
The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained.
Avetisyan, A. A.+3 more
core +1 more source
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao+17 more
wiley +1 more source
A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the ...
Abramowitz M.+8 more
core +1 more source
Harnessing Outer Space for Improved Electrocaloric Cooling
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo+8 more
wiley +1 more source
The plasma edge of transparent conducting oxide SrNbO3 shifts from ∼2 eV in the visible range to 1.37 eV in the near‐infrared region by off‐stoichiometry using the vacancy sites as quasi‐substitutional virtual elements. This work advances the stoichiometry engineering of perovskite oxides using oxide molecular beam epitaxy, allowing synthesis beyond ...
Jasnamol Palakkal+11 more
wiley +1 more source
This work investigates modifying interfacial contacts in realizing giant‐performance semiconductor nanomembrane optoelectronics. Strategies, including surface reaction and buffer layer work‐function modulation, are explored to boost the Schottky barrier. An emerging material of YbOx is utilized for near‐ideal Ohmic contact.
Yibo Zhang+5 more
wiley +1 more source
Sub-Kelvin resistance thermometer [PDF]
A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting ...
Castles, Stephen H.
core +1 more source
Making Photoresponsive Metal–Organic Frameworks an Effective Class of Heterogeneous Photocatalyst
This review summarizes photoresponsive MOFs for photocatalytic applications, focusing on their capacity to enhance light harvesting, charge transfer, and surface reactions. While existing studies provide foundational insights, emerging characterization techniques enable a deeper understanding of photoresponsive MOFs.
Rui Liu+3 more
wiley +1 more source
Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$
Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal ...
Bianchi, Marco+8 more
core +1 more source
Heterostructured semiconductors are materials with unique features formed by combination of two or more semiconductors with suitable interface between them.
Romero T. Bueno+4 more
doaj +1 more source