Results 11 to 20 of about 83,224 (275)
Modelling of a SiC Based Detector for the Interpretation of 14.1 MeV Neutrons Measurements [PDF]
EPJ Web of Conferences, 2023 Wide-bandgap semiconductor-based fast neutron detectors such as silicon carbide (SiC) seem to be a promising concept to meet the implementation requirements as well as the performance specifications for fusion and fission environments such as radiation ...
Potiron Quentin +7 more
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Research progress in solar-blind UV detectors based on wide-band semiconductor Ga2O3
Cailiao gongcheng, 2023 Ga2O3 is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum, which can be used to prepare solar-blind UV detectors. The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti ...
SHEN Leyun +6 more
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Extended diagnostics of semiconductor UV detectors [PDF]
Biuletyn Wojskowej Akademii Technicznej, 2016 The article presents selected issues of UV detectors’ diagnostics. When choosing the UV detector to a specific application, one should take into account that their optical and electrical parameters can vary significantly during operation. The most common
Joanna Ćwirko, Robert Ćwirko
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Estimation of Fano factor for oversquare HPGe detector
Radiation Protection and Environment, 2022 Fano factor is a quantity used to measure the departure of the observed variance in the number of charge carriers produced from that predicted using poison statistics. Fano factor varies with the detector type.
M Manohari +3 more
doaj +1 more source
Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review
Sensors, 2018 Ultraviolet (UV) detectors have attracted considerable attention in the past decade due to their extensive applications in the civil and military fields.
Yanan Zou +3 more
doaj +1 more source
CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays [PDF]
, 2017 We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process.
Cumming, David R.S. +3 more
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Monolayer Semiconductor Auger Detector [PDF]
Nano Letters, 2020 Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly.
Colin Ming Earn Chow +11 more
openaire +3 more sources
Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors [PDF]
, 2001 We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different ...
Bolotnikov, Aleksey E. +5 more
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Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]
, 2018 A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J. +8 more
core +1 more source
Current responsivity of semiconductor superlattice THz-photon detectors [PDF]
, 1998 The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of ...
Ignatov, Anatoly A., Jauho, Antti-Pekka
core +2 more sources