Results 11 to 20 of about 1,471,378 (298)

Cesium Lead Bromide Semiconductor Radiation Detectors: Crystal Growth, Detector Performance and Ionic Polarization

Journal of Materials Chemistry C, 2022
Cesium Lead Bromide (CsPbBr3) is an upcoming radiation detector semiconductor that has the potential to match the detection properties of Cadmium Zinc Telluride (CZT) and Thallium Bromide (TlBr).
R. Toufanian, S. Swain, P. Becla, A. Datta, S. Motakef   +4 more
semanticscholar   +1 more source

Velocity-dependent dark matter interactions in single-electron resolution semiconductor detectors with directional sensitivity [PDF]

Physical Review D, 2019
We investigate the velocity and recoil momentum dependence of dark matter interactions with ordinary matter. In particular we focus on the single-electron resolution semiconductor detectors, which allow experimental assessment of sub-GeV dark matter ...
M. Heikinheimo, K. Nordlund, K. Tuominen, N. Mirabolfathi   +3 more
semanticscholar   +1 more source

Methane-specific gas detectors: the effect of natural gas composition [PDF]

, 2010
Certain gas sensors, particularly those based on optical spectroscopy, have enabled the detection of individual gas species such as methane with low cross-sensitivity to other gases.
Hodgkinson, Jane, Pride, Russ D., R D Pride, J Hodgkinson   +3 more
core   +1 more source

Stable perovskite single-crystal X-ray imaging detectors with single-photon sensitivity

Nature Photonics, 2023
A major thrust of medical X-ray imaging is to minimize the X-ray dose acquired by the patient, down to single-photon sensitivity. Such characteristics have been demonstrated with only a few direct-detection semiconductor materials such as CdTe and Si ...
Kostiantyn Sakhatskyi, B. Turedi, G. Matt, Erfu Wu, Anastasiia Sakhatska, Vitalii Bartosh, M. Lintangpradipto, Rounak Naphade, I. Shorubalko, O. Mohammed, S. Yakunin, O. Bakr, M. Kovalenko   +12 more
semanticscholar   +1 more source

Room temperature semiconductor detectors for nuclear security

Journal of Applied Physics, 2019
Preventing radioactive sources from being used for harmful purposes is a global challenge. A requirement for solving the challenge is developing radiation detectors that are efficient, sensitive, and practical.
Paul M. Johns, J. Nino
semanticscholar   +1 more source

LiInSe2 for Semiconductor Neutron Detectors

Frontiers of Physics, 2020
Lithium indium selenide (LiInSe2) is being developed for use as a room temperature semiconductor detector for thermal neutrons. The material has been studied for a number of applications including non-linear optics such as parametric oscillators, as ...
A. Kargar, H. Hong, J. Tower, A. Gueorguiev, Hadong Kim, L. Cirignano, J. Christian, M. Squillante, K. Shah   +8 more
semanticscholar   +1 more source

Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Nature Communications, 2023
Exploring two-dimensional layered ferroelectric semiconductors is highly desired for ferroelectric-based devices. Here, the authors realize the room-temperature ferroelectricity in layered Y-doped γ-InSe due to the microstructure modifications.
F. Sui, Min Jin, Yuanyuan Zhang, R. Qi, Yuning Wu, R. Huang, F. Yue, J. Chu   +7 more
semanticscholar   +1 more source

Perovskite: Scintillators, direct detectors, and X-ray imagers

Materials Today, 2022
1 Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea Department of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea Department of Chemistry, School of ...
A. Jana, Sangeun Cho, S. Patil, Abhishek Meena, Y. Jo, V. Sree, Youngsin Park, Hyungsang Kim, H. Im, R. Taylor   +9 more
semanticscholar   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source

Monolayer Semiconductor Auger Detector [PDF]

Nano Letters, 2020
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly.
Colin Ming Earn Chow, Hongyi Yu, John R. Schaibley, Pasqual Rivera, Joseph Finney, Jiaqiang Yan, David Mandrus, Takashi Taniguchi, Kenji Watanabe, Wang Yao, David Henry Cobden, Xiaodong Xu   +11 more
openaire   +3 more sources