Results 181 to 190 of about 103,204 (298)

MXene alloy-based metal-semiconductor contact for low-resistive field-effect transistors. [PDF]

Commun Eng
Bera S, Kaushik D, Kumar H.
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]

Sci Rep
Ghosh R, Saha P.
europepmc   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source

A stochastic dual-phase-lag two-temperature photo-thermoelastic model for double-porosity semiconductors with initial stress. [PDF]

Sci Rep
Rezk EG, Ismail GM, Ahmed A, Lotfy K, El-Bary AA, Can E, Elidy ES.   +6 more
europepmc   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]

Nat Commun
Zhu W, Wang Z, Hu T, Kudrynskyi ZR, Zhou T, Kovalyuk ZD, Hu C, Lin H, Li X, Deng Y, Lv Q, Zhao L, Patanè A, Žutić I, Zheng H, Wang K.   +15 more
europepmc   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source