Results 211 to 220 of about 2,771,177 (302)

Thermal Enhancement of TADF‐OLED Performance: Size of Active Area Matters

open access: yesAdvanced Materials Interfaces, EarlyView.
Large‐area TADF‐based OLEDs can be used as thermally assisted light‐emitting devices, in which moderate waste heat can partially compensate for efficiency losses associated with increasing active area. ABSTRACT Temperature significantly impacts the performance of light‐emitting diodes, typically causing degradation as they heat up. However, OLEDs using
Demyd V. Pekur   +9 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

open access: yesAdvanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Deep Eutectic Solvent‐Enhanced PEDOT: PSS/NR Foam Piezoresistive Sensor for High‐Sensitivity Wearable Devices and Sleep Monitoring Applications

open access: yesAdvanced Materials Interfaces, EarlyView.
A high‐performance piezoresistive foam sensor is developed by integrating natural rubber, PEDOT: PSS, and a deep eutectic solvent (DES). DES effectively detaches insulating PSS from PEDOT, dramatically amplifying electrical conductivity and sensitivity.
Shun Zhang   +4 more
wiley   +1 more source

Reversibly Stacked Monolithic 3D Integrated Circuits. [PDF]

open access: yesNat Commun
Weng TT   +13 more
europepmc   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu   +11 more
wiley   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

open access: yesDiscov Nano
Zhao H   +6 more
europepmc   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang   +3 more
wiley   +1 more source

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