Results 201 to 210 of about 2,771,177 (302)

High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching. [PDF]

Micromachines (Basel)
Ding Y, Cao X, Li Y, Yang X, Wen Y, Li X, Huang X, Li Z, Weng J, Zhang B.   +9 more
europepmc   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

Advanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee, Han Joo Lee, Myeonggeun Choe, Jeehong Park, Yeonjin Yi, Seongil Im, Suk Hyun Park, Hee Cheul Choi, Ji Hoon Park, Sarah S. Park   +9 more
wiley   +1 more source

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]

Sci Rep
Ashok T, Pandey CK.
europepmc   +1 more source

Photocatalytic Water Splitting on the Lunar Surface: Prospects for In Situ Resource Utilization

Advanced Materials Interfaces, EarlyView.
Water has been found in craters on the moon nearby locations which are illuminated >80% of the time. Photocatalysis uses energy from sunlight to drive chemical reactions such as water splitting to produce oxygen and hydrogen. It is a scalable technology that requires lighter equipment and utilizes resources available on the moon. ABSTRACT The discovery
Ranjani Kalyan, Thomas D. Small, Gregory F. Metha, Mahmoud Adel Hamza, Thomas J. O'Dea, Yideng Shen, Cameron J. Shearer   +6 more
wiley   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Ti3C2Tx MXene/Silver Composite Foams For Lightweight, High‐Performance Electromagnetic Interference Shielding and Joule Heating

Advanced Materials Interfaces, EarlyView.
Ultrathin MXene/EMF composite foams achieve a specific shielding efficiency of 749.6 dB.dB·cm3$\mathrm{dB}\cdot {\mathrm{cm}}^{3}$/g, while the silver‐enhanced MXene/Ag/EMF reaches 81.4 dB shielding effectiveness at just 1.0 mm thickness. Both composites exhibit rapid Joule heating, retain stability up to 250∘C$^\circ{\rm C}$, and withstand 1000 ...
Abdullah A. Mahmood, Mingxuan Li, Vahid Rad, Mehdi Zarei, Chen‐Yu Yeh, Masoud Soroush, Guangyong Li, Paul W. Leu   +7 more
wiley   +1 more source

Integration of LASER Diodes Emitting at Eight Different Wavelengths from Blue to Infrared on a 4H-SiC-Based Optical Integration Platform. [PDF]

Materials (Basel)
Wang X, Li X, Kang R, Jia W, Duan X, Yang R, Fan Z, Li Z, Zhou J, Zuo Z.   +9 more
europepmc   +1 more source

Processing‐Induced Performance Limits of Platinum Resistance Temperature Detectors for Reliable Organ‐On‐A‐Chip Sensing

Advanced Materials Interfaces, EarlyView.
The thermal budget imposed during oxide passivation is revealed as a key design parameter for Pt resistance temperature detectors in Organ‐on‐a‐Chip platforms. By establishing a direct processing–microstructure–device performance relationship, this work transforms an unavoidable fabrication step into a strategy for reliable integrated temperature ...
Gabriel M. Ferreira, Paulo J. Sousa, Susana O. Catarino, Graça Minas, Patrícia C. Sousa   +4 more
wiley   +1 more source

Solution-Processed Low-Voltage-Driven Phototransistors Using Colloidal ZnSnO₃ Nanocrystal. [PDF]

Chem Asian J
Yadav AK, Dahiya S, Pandey U, Aich PK, Chetri P, Das A, Pal BN.   +6 more
europepmc   +1 more source

Spike‐Type Band Alignment via in2Se3/CuI Charge‐Transport Engineering Enables 26% Efficient Lead‐Free RbSn0.5Ge0.5I3 Perovskite Solar Cells

Advanced Materials Interfaces, EarlyView.
A lead‐free and Cd‐free RbSn₀.5Ge₀.5I3 perovskite solar cell is optimized through In2Se3/CuI charge‐transport engineering using SCAPS‐1D. Spike‐type band alignment suppresses interfacial recombination, enhances charge extraction, and achieves a power conversion efficiency of 26.01%, providing an effective strategy for high‐performance and ...
Md. Al Amin, Md. Sanwar Hossain, Md. Feroz Ali, Md Shafiul Alam, Mohammad Ali, Mohammed A. AlAqil   +5 more
wiley   +1 more source