Results 181 to 190 of about 2,771,177 (302)

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]

Small
Wang Z, Chen X, Lin F, Li X, Wang F, Guo S, Yu S, Li L, Huang JK.   +8 more
europepmc   +1 more source

Adsorption‐Engineered Hydrocarbon Ionomers for Durable Proton‐Exchange Membrane Fuel Cells

Advanced Materials, EarlyView.
Hydrocarbon ionomers suffer from oxidation‐driven interfacial degradation in PEM fuel cell cathodes, leading to catalyst instability. Here, adsorption‐engineered poly(fluorene) ionomers decouple interfacial anchoring from oxidative degradation, enabling strong catalyst–ionomer interactions while resisting electrochemical oxidation.
Heemin Park, Kate Chen, Su Min Ahn, Hengquan Guo, Cy Fujimoto, Jong‐Ho Choi, Lynda Amichi, Danah Kim, Seung Geol Lee, Xiaojing Wang, Jacob S. Spendelow, Sun Young Kang, Panagiotis Bexis, Eun Joo S. Park, Yu Seung Kim   +14 more
wiley   +1 more source

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Interface-Engineered, Low-Damage IGZO/HfO₂ Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process. [PDF]

Micromachines (Basel)
Hwang I, Nam H, Kim J, Kim B, Jang Y, Lee W, Kang M, Yoon C.   +7 more
europepmc   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Biomimetic ferroelectric-semiconductor transistor enables neuronal multisensory integration. [PDF]

Nat Commun
Liu S, Zhang L, Xie R, Wu Z, Chen A, Han L, Shan L, Dong Z, Liu J, Guo X, Zhu Y, Zhou Z, Liu F, Shen L, Huang P, Wang X, Wang Z, Cai Y, He M.   +18 more
europepmc   +1 more source

2D Abrupt Nano‐Junctions Blending sp–sp2 Bonds on Atomically Precise Heterostructures

Advanced Materials, EarlyView.
A lateral heterostructure between atomically precise sp–sp2$^2$ metalated graphdiyne and sp2$^2$ graphene nanoribbons is realized by on‐surface synthesis and investigated by STM and DFT. The impact of on‐surface synthesis byproducts on covalent junction formation yield is unveiled.
Alice Cartoceti, Simona Achilli, Masoumeh Alihosseini, Adriana E. Candia, Enrico Beltrami, Paolo D'Agosta, Alessio Orbelli Biroli, Francesco Sedona, Andrea Li Bassi, Jorge Lobo‐Checa, Carlo S. Casari   +10 more
wiley   +1 more source

Engineering of Optoelectronic Devices for Renewable Energy Applications. [PDF]

Micromachines (Basel)
Pereira J, Souza R, Moita A.
europepmc   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source