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Testing for Reliability Qualification of Semiconductor Memory Devices
16th International Reliability Physics Symposium, 1978This presentation describes the essence of the reliability qualification program and procedures which have evolved since we first started designing semiconductor memory systems in 1970. The goal for the program is to determine and maintain the reliability of the semiconductor memory devices and systems over their whole life.
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Reliability Testing of Semiconductor Optical Devices
2012Reliability of semiconductor optical devices used in recent systems and equipment is described from an aspect of the degradation mechanisms observed on various reliability tests. The degradation mechanisms clarified for last three decades still govern the device reliability in recent systems and equipment.
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Reliability issues in high-voltage semiconductor devices
2012Semiconductor devices are used in many different application areas and play an important role in the modern world. Advances in technology, customer demands, and cost pressure lead to higher integration densities and to smart power structures, which incorporate high- and low-voltage devices on the same chip.
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Instrumentation for Innovative Semiconductor Power Devices Reliability Tests
International Journal of Engineering and Industries, 2013An automated system, designed to perform innovative reliability tests on semiconductor power devices, is reported. Hardware and software modules have been specifically developed for the demonstration of the proposed methodology. Both High Temperature Reverse Bias (HTRB) and Electrical Characterization Test (ECT) are executed by the system on power ...
Giuseppe Consentino +3 more
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Reliability of reverse properties of power semiconductor devices:
Microelectronics Journal, 2008Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be linked with individual technological operations, most frequently with preparation of ...
V. Papež, B. Kojecký, D. Šámal
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Reliability certification of semiconductor devices using Goldthwaite diagrams
SPIE Proceedings, 2000Beginning at observation that if a Goldthwaite diagram is draw a line (lambda) equals constant, all the curves of this diagrams are cutes in a point that are a value equal with that constant. If the constant is choose the maximum admissible value of failure rate multiplied by time of qualified life, the intersection of (lambda) line with the different (
Floarea Baicu +2 more
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Reliability of semiconductor devices - The need for simulation
2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates.
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Reliability of semiconductor devices for submarine-cable systems
Proceedings of the IEEE, 1974The Bell System initiated development of semiconductor devices for use in broad-band repeatered coaxial submarine-cable telephone systems in the early 1960's. Development of such devices has continued at varying levels of activity to this date. Now, over a decade later, more than five years of successful operational life have elapsed on the first ...
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Reliability of wide bandgap semiconductor power switching devices
Proceedings of the IEEE 2010 National Aerospace & Electronics Conference, 2010Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
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