Results 141 to 150 of about 86,995 (199)

Elements of semiconductor-device reliability

Proceedings of the IEEE, 1974
Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality.
C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek   +4 more
openaire   +3 more sources

Reliability prediction modeling of semiconductor light emitting device

IEEE Transactions on Device and Materials Reliability, 2003
This paper presents a probabilistic-approach-based reliability prediction model of semiconductor light emitting devices. Using this model with given initial light-emitting performance and degradation behavior otherwise determined by experiment, the reliability function of the devices is obtained, and the results correlate well with experimental results.
null Jingsong Xie, M. Pecht
openaire   +3 more sources

Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
openaire   +2 more sources

Reliability of compound semiconductor devices

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2002
This paper reviews the reliability problems of compound semiconductor devices. These devices suffer from specific failure mechanisms, which are related to their limited maturity. Only the GaAs MESFETs exhibit a stable technology and an assessed reliability. The metallizations employed in HEMTs already benefit from this assessment.
F. Fantini, L. Cattani, D. Dieci
openaire   +1 more source

Semiconductor device reliability vs process quality

Microelectronics Reliability, 1992
Abstract This paper describes a method for defining a quantitative model relating “quality” expressed in terms of parameter distributions and “reliability” expressed in terms of failure rates. This model makes it possible to generate a more realistic failure rate estimate for semiconductor devices.
Riko Radojcic, Paul Giotta
openaire   +1 more source

Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
A. Silzars, D.J. Bates, A. Ballonoff, G. Taylor   +3 more
openaire   +1 more source

Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
openaire   +1 more source

A reliability appraisal of semiconductor devices

Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1959
The current problems of assessing the reliability of semiconductor devices are discussed, and reference is made to the order of reliability required in typical applications.The evidence from life tests carried out on devices drawn from production lines of transistors and diodes shows how variations in operating conditions and assessment levels affect ...
R. Brewer, W.W.D. Wyatt
openaire   +1 more source

Reliability of semiconductor devices

Physics in Technology, 1976
Report on Metallization systems for semiconductor devices, 13 February 1976 Imperial College, London.
openaire   +1 more source