Results 151 to 160 of about 86,995 (199)

Reliability assessment of power semiconductor devices

2016 19th International Symposium on Electrical Apparatus and Technologies (SIELA), 2016
This paper concerns some issues related to failures that occurred in power semiconductor devices. A review of basic requirements aimed at normal and reliable operation of semiconductor components is done by using reliability prediction approaches and prognostic methods.
Anton Georgiev, Toncho Papanchev, Nikolay Nikolov   +2 more
openaire   +1 more source

Durability and Reliability of Semiconductor Devices

MRS Proceedings, 1998
AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved.
V. G. Sidorov, V. I. Sokolov, D. V. Sidorov   +2 more
openaire   +1 more source

Semiconductor Device Reliability

1989
I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of ...
openaire   +1 more source

Improved Semiconductor Device Reliability from Plasma Dicing

2019 International Wafer Level Packaging Conference (IWLPC), 2019
There are many emerging applications where die strength is critically important, most notably in harsh automotive environments, but also in other areas such as consumer wearables or remote sensing. Plasma dicing using a dry, chemically-driven etch has been introduced into production applications as a viable alternative to traditional methods of wafer ...
R. Barnett, Janet Hopkins, Stewart Fulton, Oliver Ansell, Samira Kazemi, Matthew Day   +5 more
openaire   +1 more source

Status of Compound Semiconductor Device Reliability

1990
A review is made of compound semiconductor device reliability from the period 1980 to the present. Emphasis is placed on technology based on field effect transistors (FETs). Many reliability studies were made of small signal GaAs FETs in the 1970s and of GaAs power FETs in the 1980’s; a substantial reliability base exists for these devices.
W. T. Anderson, A. Christou
openaire   +1 more source

Building reliability monitors for power semiconductor devices

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2002
Statistical analyses were used to build an efficient reliability monitor for power semiconductor devices. Benefits for the device manufacturing are obtained.
L. Galateanu, C. Tibeica, F. Turtudau
openaire   +1 more source

Reliability Testing of Semiconductor Devices in a Humid Environment

Journal of the IEST, 1993
The influence of humidity on semiconductor device reliability is investigated with two main purposes: to emphasize the role of humidity in the failure process as a stress factor and to model the reliability-humidity relationship. Experiments were performed on two types of plastic encapsulated semiconductor devices (optoelectronic and ICs).
M. Bazu, M. Tazlauanu
openaire   +1 more source

Reliability analysis of electrical engineering power semiconductor devices

Russian Electrical Engineering, 2016
A new approach to predicting reliability indices based on the numerical analysis of nonuniform temperature fields of power semiconductor devices (PSDs) is presented. Thermal analysis of the power diode module is carried out in a two-dimensional formulation with junction temperature Tjunc = 125°C.
G. V. Kuznetsov, E. V. Kravchenko, N. A. Pribaturin   +2 more
openaire   +1 more source

Reliability Issue in Compound Semiconductor Heterojunction Devices

1998
The failure mechanisms affecting electron devices based on compound semiconductors are reviewed.
FANTINI, Fausto, BORGARINO, Mattia, L. CATTANI, P. COVA, R. MENOZZI, G. SALVIATI, C. CANALI, G. MENEGHESSO, E. ZANONI   +8 more
openaire   +3 more sources

Reliability physics study for semiconductor-polymer device development

Microelectronics Journal, 2003
Abstract We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications.
Dyanna G.D. Teixeira, Jane M.G. Laranjeira, Elder A. de Vasconcelos, Eronides F. da Silva, Walter M. de Azevedo, Helen J. Khoury   +5 more
openaire   +1 more source