Results 121 to 130 of about 2,771,177 (302)
This Special Issue of the IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY is intended to give a com- prehensive picture of the state-of-the-art in the field of non- volatile memories.
P., Cappelletti, Pavan, Paolo, IEEE
core
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source
Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon +14 more
wiley +1 more source
Wide bandgap (WBG) power semiconductors have attracted significant attention from both academia and industry because they are superior to conventional silicon-based devices. In WBG power semiconductor packages, die attach materials play a crucial role in
Young-Min Ju +5 more
doaj +1 more source
β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging
Owing to superior breakdown voltage and excellent robustness, the beta-gallium oxide (β-Ga2O3) power device has emerged as a pivotal research frontier in power electronics.
Zi-Lin Hao +4 more
doaj +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee +21 more
wiley +1 more source
ABSTRACT Neat films of organic dyes are an interesting technological platform for solar cells and photodetectors. Recently, the conventional biphasic bulk‐heterojunction paradigm for photoinduced charge separation was challenged by the observation that charge carriers can be photogenerated in single‐component materials. A comprehensive experimental and
Davide Giavazzi +12 more
wiley +1 more source
Engineered red blood cell‐derived extracellular vesicles (eRBCEVs) are synthesized via controlled microfluidic assembly from native RBC lipids, enabling tunable encapsulation of proteins, nucleic acids, nanoparticles, and viral vectors. The platform demonstrates reproducible nanoscale architecture, preserved membrane composition, and functional cargo ...
Chiranth K. Nagaraj +23 more
wiley +1 more source
The distribution of nitrogen in semiconductor devices plays a crucial role in tuning their physical and electrical properties. However, direct observation and precise quantification of nitrogen remain challenging because of analytical limitations ...
Byeong-Gyu Chae +12 more
doaj +1 more source

