Results 101 to 110 of about 86,995 (199)

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]

Small
Wang Z, Chen X, Lin F, Li X, Wang F, Guo S, Yu S, Li L, Huang JK.   +8 more
europepmc   +1 more source

2D Junction Profiling on Semiconductor Device Reliability Fail [PDF]

Microscopy and Microanalysis, 2017
Y.Y. Wang, J. Nxumalo, A. Katnani, D. Ioannou, J. Brown, K. Bandy, M. Macdonald, J. Bruley   +7 more
openaire   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

AI-driven quantitative review of mobility-stability trade-off in oxide semiconductors. [PDF]

Nano Converg
Hong JH, Lee CH, Kim HW, Jeon DW, Kang JH, Kim YS, Bae JS, Heo S, Lee S, Na J, You J, Hong S, Cho H, Park JS, Cho SB.   +14 more
europepmc   +1 more source

Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

ACS Omega, 2019
Elisha Mercado, Yan Zhou, Yong Xie, Qinghua Zhao, Hui Cai, Bin Chen, Wanqi Jie, Sefaattin Tongay, Tao Wang, Martin Kuball   +9 more
doaj   +1 more source

Microstructure Semiconductor Materials and Optoelectronic Applications. [PDF]

Nanomaterials (Basel)
Wang Z, Liu X.
europepmc   +1 more source

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source

Influence of metal-semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs). [PDF]

Sci Rep
Kang SC, Cho JC, Lee ES, Park DW.
europepmc   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source