Results 81 to 90 of about 2,771,177 (302)

A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application

IEEE Access, 2019
This paper develops a competing risk model to simultaneously analyze censored catastrophic failures and nonlinear degradation data of the NAND-based solid-state drives for space application.
Peng Li, Wei Dang, Taichun Qin, Zeming Zhang, Congmin Lv   +4 more
doaj   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Reliability physics of compound semiconductor transistors for microwave applications

, 2001
This paper reviews the reliability problems of compound semiconductor transistors for microwave applications. These devices suffer from specific failure mechanisms, which are related to their limited maturity, with the exception of the GaAs MESFETs ...
FANTINI, Fausto, D. Dieci, BORGARINO, Mattia, R. Menozzi, L. Cattani   +4 more
core   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]

, 2011
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent, Philippe Paillet, Gaillardin, Marc, Sylvain Girard, Girard, Sylvain, Pierre Magnan, Marc Gaillardin, Martinez, Martial, Gaillardin, M., Paillet, P., Martial Martinez, Paillet, Philippe, Vincent Goiffon, Magnan, Pierre, Martinez, M.   +14 more
core   +1 more source

Reliability Evaluation of High Power Semiconductors

Kongzhi Yu Xinxi Jishu, 2015
It described the modern reliability engineering based on math and physics. The reliability problems of power semiconductor devices were introduced. Three major acceleration tests were described by means of 4045 IGCT device and related failure rate curves
ZHANG Ming
doaj  

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Semiclassical transport in semiconductor superlattices with boundaries [PDF]

, 2004
In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
core   +1 more source