Results 81 to 90 of about 86,995 (199)

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
doaj   +1 more source

Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device

Kongzhi Yu Xinxi Jishu, 2016
The direct reason of power semiconductor device failure from mechanical stress is that outside stress comes bigger than the strength of the device, which indirectly causes upload of electricity stress or heat stress and ultimately brings about failure of
ZHANG Xiying, YAN Ji, REN Yadong
doaj  

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Advanced Electronic Materials
A new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric
Jiajie Yu, Tianyu Wang, Chen Lu, Zhenhai Li, Kangli Xu, Yongkai Liu, Yifan Song, Jialin Meng, Hao Zhu, Qingqing Sun, David Wei Zhang, Lin Chen   +11 more
doaj   +1 more source

Power Semiconductor Device Humidity Reliability Study

International Journal of Mechanical and Electrical Engineering
This paper aims to study the aging mechanism of power semiconductor devices in high humidity environments, propose anti-humidity optimization design methods, and explore the humidity reliability of these devices in-depth. The reliability of the devices can be examined through High Humidity High Temperature Reverse Bias Testing to simulate aging in high
openaire   +1 more source

Silicon carbide, an emerging high temperature semiconductor [PDF]

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation.
Matus, Lawrence G., Powell, J. Anthony
core   +1 more source

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

, 2008
In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations.
Furnemont A., G. Giusi, G. Iannaccone, Hagenbeck R., Han Z., Lin H., Lombardo S., Ohkura Y., Pang H., Razafmdramora J., U. Ravaioli, Vianello E., Yih C. M.   +12 more
core   +1 more source

Review of gate driver integrated gate-oxide health monitoring for SiC MOSFETs: Methods, challenges, and perspectives

Power Electronic Devices and Components
The reliability issue of gate oxide of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is still a bottleneck for its wide spread in high-efficiency, high-temperature, and high-frequency power electronics applications ...
Kun Tan, Haiyang Xie, Bing Ji, Wenping Cao, Cungang Hu, Shu Yang, Xi Tang   +6 more
doaj   +1 more source

Proceedings of the Cold Electronics Workshop [PDF]

The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were ...
Kirschman, R., Tward, E.
core   +1 more source

Microelectronics Process Engineering at San Jose State University: A Manufacturing-Oriented Interdisciplinary Degree Program [PDF]

, 2002
San Jose State University\u27s new interdisciplinary curriculum in Microelectronics Process Engineering is described. This baccalaureate program emphasizes hands-on thin-film fabrication experience, manufacturing methods such as statistical process ...
Allen, Emily, Dessouky, Yasser, Gleixner, Stacy H., Parent, David W, Vanasupa, Linda, Young, Greg   +5 more
core   +1 more source

An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs

IET Power Electronics
The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration.
Peng Xue, Eckart Hoene, Pooya Davari
doaj   +1 more source