Results 71 to 80 of about 86,995 (199)
Index to NASA Tech Briefs, January - June 1966 [PDF]
, 1966 Index to NASA technological innovations for January-June ...
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Ain Shams Engineering Journal, 2015 High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life.
Mohana Sundaram Muthuvalu +2 more
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Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers [PDF]
, 2012 We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse ...
Bryce, A.C. +3 more
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A Comprehensive Review of Single Event Transients on Various MOS Devices
IEEE AccessDue to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-Event Transients (SETs) are becoming an increasingly important problem in the design and reliability evaluation of semiconductor devices. This paper extensively
P. S. Rajakumar, S. Satheesh Kumar
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Method of examining microcircuit patterns [PDF]
, 1986 Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a ...
Suszko, S. F.
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A Competing Risk Model of Reliability Analysis for NAND-Based SSDs in Space Application
IEEE Access, 2019 This paper develops a competing risk model to simultaneously analyze censored catastrophic failures and nonlinear degradation data of the NAND-based solid-state drives for space application.
Peng Li +4 more
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Reliability Evaluation of High Power Semiconductors
Kongzhi Yu Xinxi Jishu, 2015 It described the modern reliability engineering based on math and physics. The reliability problems of power semiconductor devices were introduced. Three major acceleration tests were described by means of 4045 IGCT device and related failure rate curves
ZHANG Ming
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SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]
, 2014 textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
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Reliability Study of Fiber Coupling Efficiency of 980 nm Semiconductor Laser
PhotonicsIn order to improve the stability of semiconductor laser fiber coupling efficiency, based on the coupling principle, the optimal parameters for semiconductor laser fiber coupling were simulated to be θ = 45°, r = 3.25 μm, and z = 5.65 μm.
Gang Liu +6 more
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Influence of material quality and process-induced defects on semiconductor device performance and yield [PDF]
An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated.
Mckee, W. R., Porter, W. A.
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