Results 91 to 100 of about 2,771,177 (302)
Reliability Study of Fiber Coupling Efficiency of 980 nm Semiconductor Laser
In order to improve the stability of semiconductor laser fiber coupling efficiency, based on the coupling principle, the optimal parameters for semiconductor laser fiber coupling were simulated to be θ = 45°, r = 3.25 μm, and z = 5.65 μm.
Gang Liu +6 more
doaj +1 more source
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj +4 more
wiley +1 more source
Method of manufacturing a semiconductor sensor device and semiconductor sensor device
The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and
core
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices.
Ueda, Osamu, Pearton, Stephen
core +1 more source
Generic approach for deriving reliability and maintenance requirements through consideration of in-context customer objectives [PDF]
Not all implementations of reliability are equally effective at providing customer and user benefit. Random system failure with no prior warning or failure accommodation will have an immediate, usually adverse impact on operation.
Jones, Jeffrey Alun, Warrington, Les
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Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong +9 more
wiley +1 more source
Some optimal designs for grouped data in reliability demonstration tests
The paper considers optimal demonstration testdesigns with grouped inspection data from logistic, log-logistic, normal/Gaussian and log-normal distributions, along with the test statistics of the mean life and reliability for ...
Wei, Duan; Bau, Jinn-jomp
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Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen +3 more
doaj +1 more source
Characterization and Modeling of Semiconductor Power Devices Reliability [PDF]
This thesis aims at studying, characterizing and modeling the trapping and de-trapping mechanisms occurring during the ON-state operation mode and leading to the degradation of semiconductor power devices. In this operating condition, the combined effect of moderate electric fields, high currents and temperatures due to self-heating effects can ...
openaire +1 more source
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source

