Results 91 to 100 of about 86,995 (199)

Study of high voltage solar array configurations with integrated power control electronics [PDF]

Solar array electrical configurations for voltage ...
Ebersole, T., Hayden, J. H., Rasmussen, R., Weiner, P.   +3 more
core   +1 more source

Characterization and Modeling of Semiconductor Power Devices Reliability

, 2017
This thesis aims at studying, characterizing and modeling the trapping and de-trapping mechanisms occurring during the ON-state operation mode and leading to the degradation of semiconductor power devices. In this operating condition, the combined effect of moderate electric fields, high currents and temperatures due to self-heating effects can ...
openaire   +2 more sources

Saturn integrated circuit reliability test program Final report, 28 Jun. 1966 - 1 Jul. 1967 [PDF]

Literature survey and test program to study reliability of linear integrated ...
Carpenter, M. R., Mc Kenzie, K. R.
core   +1 more source

Advanced WBG power semiconductor packaging: nanomaterials and nanotechnologies for high-performance die attach paste

Nano Convergence
Wide bandgap (WBG) power semiconductors have attracted significant attention from both academia and industry because they are superior to conventional silicon-based devices. In WBG power semiconductor packages, die attach materials play a crucial role in
Young-Min Ju, Tae-Wan Kim, Seung-Hyun Lee, Ho-Jin Lee, Jinho Ahn, Hak-Sung Kim   +5 more
doaj   +1 more source

β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging

Journal of Electronic Science and Technology
Owing to superior breakdown voltage and excellent robustness, the beta-gallium oxide (β-Ga2O3) power device has emerged as a pivotal research frontier in power electronics.
Zi-Lin Hao, Chen-Yi Dai, Zheng Zhang, Yuan-Xi Jia, Xue-Feng Wu   +4 more
doaj   +1 more source

Wafer level reliability for high-performance VLSI design [PDF]

As very large scale integration architecture requires higher package density, reliability of these devices has approached a critical level. Previous processing techniques allowed a large window for varying reliability.
Root, Bryan J., Seefeldt, James D.
core   +1 more source

Direct observation of 3D nitrogen distribution in silicon-based dielectrics using atom probe tomography

Nature Communications
The distribution of nitrogen in semiconductor devices plays a crucial role in tuning their physical and electrical properties. However, direct observation and precise quantification of nitrogen remain challenging because of analytical limitations ...
Byeong-Gyu Chae, Jeong Yeon Won, Young Sik Shin, Dong Jin Yun, Jae min Ahn, Seon Tae Park, Ki-bum Lee, Hokyun An, Mina Seol, I-Jun Ro, Se-Ho Kim, Chunhyung Chung, Eunha Lee   +12 more
doaj   +1 more source

Enhancement of Thermal Boundary Conductance between MoS2 and Dielectric Layer by Self‐Assembled Monolayers

Advanced Electronic Materials
The 2D semiconductor monolayer MoS2 is expected to be a potential channel material to achieve higher miniaturization and integration in post‐Moore era due to its exceptional electrical and optical properties.
Jian Huang, Xiaotong Yu, Xiaofeng Wang, Fanfan Wang, Zexin Liu, Kai Yang, Yue Yue, Kangyong Li, Ruiwen Dai, Aming Lin, Yiyang Sun, Tianlong Zhao, Zhiqiang Wang, Yuan Gao, Lifu Zhang, Dongdong Chen, Guoqing Xin   +16 more
doaj   +1 more source

Development of silicon carbide semiconductor devices for high temperature applications [PDF]

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications.
Matus, Lawrence G., Petit, Jeremy B., Powell, J. Anthony   +2 more
core   +1 more source

Present Problems of Reliability of Power Semiconductor Devices

Acta Polytechnica, 2000
The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high power devices, which are usually realised as an integration of a high number in parallel connected ...
openaire   +1 more source