Results 61 to 70 of about 86,995 (199)

Modelling and simulation of advanced semiconductor devices [PDF]

open access: yes, 2017
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here.
Adamu-Lema, Fikru   +6 more
core   +1 more source

The reliability of the power semiconductor module on the operating temperature

open access: yesMATEC Web of Conferences, 2014
A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis.
Kravchenko Evgeny V., Ivleva Dariya Yu.
doaj   +1 more source

Soft-switching SiC power electronic conversion for distributed energy resources and storage applications

open access: yesJournal of Modern Power Systems and Clean Energy, 2019
Power electronic conversion plays an important role in flexible AC or DC transmission and distribution systems, integration of renewable energy resources, and energy storage systems to enhance efficiency, controllability, stability, and reliability of ...
Keyan Shi   +3 more
doaj   +1 more source

Research on Test Method of Ignition Temperature of Electric Explosive Device under Electromagnetic Pulse [PDF]

open access: yesRadioengineering, 2021
The safety and reliability of electric explosive device, as the most sensitive initiating energy for igniting powder and explosive, directly impact those of weapon system. The safety and reliability of the electric explosion device were determined by the
B. Wang   +4 more
doaj  

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

open access: yesScientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato   +4 more
doaj   +1 more source

Thermal profiles within the channel of planar gunn diodes using micro-particle sensors [PDF]

open access: yes, 2017
The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled
Bajo, Miguel Montes   +6 more
core   +2 more sources

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

open access: yesNano Convergence, 2023
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as
Jaewook Lee   +7 more
doaj   +1 more source

System configuration, fault detection, location, isolation and restoration: a review on LVDC Microgrid protections [PDF]

open access: yes, 2019
Low voltage direct current (LVDC) distribution has gained the significant interest of research due to the advancements in power conversion technologies. However, the use of converters has given rise to several technical issues regarding their protections
Bououden   +11 more
core   +1 more source

Patterning solution-processed organic single-crystal transistors with high device performance

open access: yesAIP Advances, 2011
We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition.
Yun Li   +5 more
doaj   +1 more source

X-ray topographic study of defects in Si-based multilayer epitaxial power devices

open access: yesModern Electronic Materials, 2016
Silicon based multilayered epitaxial structures are currently the main material for large-scale commercial fabrication of generally used power semiconductor devices such as fast recovery epitaxial diodes (FRED), isolate gate bipolar transistor (IGBT ...
Iren L. Shul'pina, Vladimir A. Kozlov
doaj   +1 more source

Home - About - Disclaimer - Privacy