Results 41 to 50 of about 2,771,177 (302)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential [PDF]

, 2014
We investigate the viscous model of quantum hydrodynamics, which describes the charge transport in a certain semiconductor. Quantum mechanical effects lead to third order derivatives, turning the stationary system into an elliptic system of mixed order ...
Dreher, Michael, Schnur, Johannes
core   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, Mallik, Kanad, de Groot, C. H.   +2 more
core   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

First-principles design of MSi2N4/WSi2N4 (M = Ti, Zr, Hf): Structural stability, thermal, electronic and optical properties

Results in Physics
The family of two-dimensional MA2Z4 heterostructures has received increasing attention in recent years. To investigate the structural stability, electrical structure, optical characteristics, and thermal properties (M = Ti, Zr, and Hf) of MSi2N4/WSi2N4 ...
Guang Wang, Mengya Huang, Zhao Ding, Xiang Guo, Zhengli Zhang, Xuefei Liu, Yi Wang   +6 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Journal of Information Display
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park   +5 more
doaj   +1 more source

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Electronics Letters, 2023
The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper.
Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang   +3 more
doaj   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

On the Circuit-Level Reliability Degradation Due to AC NBTI Stress

, 2016
In this paper, an experimental analysis of the impactof dynamic negative bias temperature instability (NBTI) stresson the CMOS inverter dc response and temporal performanceis presented. We analyzed the circuit behavior subjected to
Benabdelmoumene, Abdelmadjid, Djezzar, Boualem, Tahi, Hakim, Chenouf, Amel   +3 more
core   +1 more source