Results 41 to 50 of about 86,995 (199)

Multilevel metallization method for fabricating a metal oxide semiconductor device [PDF]

, 1978
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and
Bouldin, D. L., Feltner, W. R., Hollis, B. R., Jr., Routh, D. E.   +3 more
core   +1 more source

Investigation of FACTS devices to improve power quality in distribution networks [PDF]

, 2011
Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying ...
Rehman Shaikh, Muhammad Asim, Rehman Shaikh, Muhammad Asim   +1 more
core   +1 more source

Reliability of Miniaturized Transistors from the Perspective of Single-Defects

Micromachines, 2020
To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a ...
Michael Waltl
doaj   +1 more source

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications [PDF]

, 2018
Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe)
Coutu, Ronald A., Jr., Mahanta, Protap, Munna, Mohiuddin   +2 more
core   +1 more source

A method for predicting IGBT junction temperature under transient condition [PDF]

, 2008
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device.
Ahmed, M. M. R., HASH(0x5651c9df3be8), Putrus, G. A.   +2 more
core   +1 more source

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests

Applied Physics Express
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2.
Shivendra K. Rathaur, Le Trung Hieu, Abhisek Dixit, Edward Yi Chang   +3 more
doaj   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices [PDF]

, 1982
Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar ...
Bar-Chaim, Nadav, Chen, T. R., Koren, Uziel, Lau, Kam Y., Margalit, Shlomo, Ury, Israel, Yariv, Amnon, Yu, K. L.   +7 more
core   +1 more source

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

, 2012
The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices.
A. A. Lagatsy, A. Garnache, A. J. Kemp, A. Lenz, A. Mutig, A. R. Albrecht, A. Rantamäki, A. Schliwa, A. Schliwa, A. Strittmatter, A. Strittmatter, B. Lita, B. S. Song, C. B. Murray, C. Ribbat, D. Bimberg, D. Guimard, D. Leonard, D. Lorenser, D. Ouyang, E. J. Saarinen, E. Kapon, F. Heinrichsdorff, F. Heinrichsdorff, G. Bester, G. C. Shan, G. C. Shan, G. Shan, H. Jiang, H. Kumano, H. Li, I. Kaminow, I. P. Marko, I. R. Sellers, J. Chilla, J. E. Hastie, J. E. Hastie, J. I. Cirac, J. Konttinen, J. M. Gerard, J. P. Reithmaier, J. Rautiainen, K. Hennessy, K. J. Vahala, L. A. Coldren, L. Fan, L. Fan, L. Fan, M. Asada, M. Fallahi, M. Kuznetsov, M. Nomura, M. Pelton, M. Pelton, M. V. Maximov, M. Yamaguchi, N. Kirstaedter, N. Kirstaedter, O. B. Shchekin, O. G. Okhotnikov, P. J. Yao, P. Lodahl, P. Michler, R. Diehl, R. Haring, R. L. Sellin, R. L. Sellin, S. A. Blokhin, S. Fathpour, S. Giet, S. Giet, S. Hilbich, S. Lutgen, S. S. Mikhrin, S. Strauf, S. Strauf, T. D. Germann, T. D. Germann, T. D. Germann, T. D. Germann, T. Vallaitis, T. Vallaitis, T. Yoshie, U. Keller, V. A. Fonoberov, W. J. Alford, X. H. Zhao, Y. He, Z. Xu   +88 more
core   +1 more source

First-principles design of MSi2N4/WSi2N4 (M = Ti, Zr, Hf): Structural stability, thermal, electronic and optical properties

Results in Physics
The family of two-dimensional MA2Z4 heterostructures has received increasing attention in recent years. To investigate the structural stability, electrical structure, optical characteristics, and thermal properties (M = Ti, Zr, and Hf) of MSi2N4/WSi2N4 ...
Guang Wang, Mengya Huang, Zhao Ding, Xiang Guo, Zhengli Zhang, Xuefei Liu, Yi Wang   +6 more
doaj   +1 more source