Results 21 to 30 of about 2,771,177 (302)

Large-signal device simulation in time- and frequency-domain: a comparison [PDF]

, 2008
The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio, Francesco Bertazzi, Giovanni Ghione, Ghione, Giovanni, Donati Guerrieri, Simona, Simona Donati Guerrieri, Bertazzi, Francesco, Fabrizio Bonani   +7 more
core   +1 more source

Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models [PDF]

, 1997
The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models.
Bonani, S., FILICORI F, Filicori, F., Pirola, M., Ghione, Giovanni, Donati Guerrieri, Simona, Ghione, G., Pirola, Marco, Bonani, F., Guerrieri, S.D., BONANI, Fabrizio, S.D. Guerrieri, F. Bonani, F. Filicori, M. Pirola, G. Ghione   +15 more
core   +3 more sources

Reliability Evaluation of Multi-Mechanism Failure for Semiconductor Devices Using Physics-of-Failure Technique and Maximum Entropy Principle

IEEE Access, 2020
The physics-of-failure (PoF) technique is a practical approach to evaluate the reliability of semiconductor devices. However, the PoF approaches are usually insufficient in dealing with multi-mechanism failure and fitting the Monte Carlo (MC) sampling ...
Bo Wan, Ye Wang, Yutai Su, Guicui Fu
doaj   +1 more source

Characterization of the in-situ degradation process of P3HT:PCBM based on hyperspectral and neural networks

Polymer Testing
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang, Zhao Ding, Junli Li, Ting Yang, Jianfeng Chen, Lifeng Bian, Chen Yang   +6 more
doaj   +1 more source

Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]

, 2016
This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core   +1 more source

A Physical Model for the Hysteresis in MoS₂ Transistors

IEEE Journal of the Electron Devices Society, 2018
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser   +8 more
doaj   +1 more source

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]

, 1998
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
core   +2 more sources

Evaluating Stresses in SiO₂ Thin Films Using Molecular Dynamics Simulations

Engineering Proceedings, 2023
Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes.
Sachin Shendokar, Nikhil Ingle, Ram Mohan, Shyam Aravamudhan   +3 more
doaj   +1 more source

Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials

Frontiers in Chemistry, 2022
The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material ...
Chi Chen, Jiaxing Li, Xia Wang, Kai Wu, Chuanhui Cheng, Chuang Wang, Yuwei Fu   +6 more
doaj   +1 more source

Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals

Advanced Engineering Materials, EarlyView.
This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao, Sriram Subramanian, Gianluca Memoli   +2 more
wiley   +1 more source