Results 31 to 40 of about 86,995 (199)

Performance enhancement of ZnGa2O4 Schottky type deep-ultraviolet photodetectors by oxygen supercritical fluid treatment

Results in Physics, 2021
For semiconductor device applications such as FinFET, MEMS, 2D materials, and wide bandgap materials, reliability is one of the most powerful key factors for commercialization in the industry. ZnGa2O4 deep ultraviolet (DUV) photodetectors (PDs) have been
Apoorva Sood, Fow-Gow Tarntair, Yu-Xuan Wang, Ting-Chang Chang, Yu-Hsuan Chen, Po-Liang Liu, Ray-Hua Horng   +6 more
doaj   +1 more source

Reliability Evaluation of Multi-Mechanism Failure for Semiconductor Devices Using Physics-of-Failure Technique and Maximum Entropy Principle

IEEE Access, 2020
The physics-of-failure (PoF) technique is a practical approach to evaluate the reliability of semiconductor devices. However, the PoF approaches are usually insufficient in dealing with multi-mechanism failure and fitting the Monte Carlo (MC) sampling ...
Bo Wan, Ye Wang, Yutai Su, Guicui Fu
doaj   +1 more source

Characterization of the in-situ degradation process of P3HT:PCBM based on hyperspectral and neural networks

Polymer Testing
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang, Zhao Ding, Junli Li, Ting Yang, Jianfeng Chen, Lifeng Bian, Chen Yang   +6 more
doaj   +1 more source

A Physical Model for the Hysteresis in MoS₂ Transistors

IEEE Journal of the Electron Devices Society, 2018
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser   +8 more
doaj   +1 more source

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models [PDF]

, 2011
The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable.
Algora del Valle, Carlos, Espinet González, Pilar, García Vara, Iván, Rey-Stolle Prado, Ignacio   +3 more
core   +2 more sources

Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]

, 2014
The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H, Montes Bajo, Miguel, Sun, Huarui, Uren, Michael J   +3 more
core   +2 more sources

Evaluating Stresses in SiO₂ Thin Films Using Molecular Dynamics Simulations

Engineering Proceedings, 2023
Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes.
Sachin Shendokar, Nikhil Ingle, Ram Mohan, Shyam Aravamudhan   +3 more
doaj   +1 more source

Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials

Frontiers in Chemistry, 2022
The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material ...
Chi Chen, Jiaxing Li, Xia Wang, Kai Wu, Chuanhui Cheng, Chuang Wang, Yuwei Fu   +6 more
doaj   +1 more source

Gate protective device for insulated gate field-effect transistors [PDF]

, 1972
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core   +1 more source

Fast physical models for Si LDMOS power transistor characterization [PDF]

, 2007
A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a ...
Everett, JP, Kearney, MJ, Rueda, HA, Johnson, EM, Aaen, PH, Wood, J, Snowden, CM   +6 more
core   +1 more source