Results 11 to 20 of about 86,995 (199)

A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms [PDF]

Micromachines
Reliability assessment of semiconductor devices increasingly requires the consideration of multiple degradation mechanisms acting simultaneously over long stress durations.
Joseph B. Bernstein, Tsuriel Avraham, Bin Wang   +2 more
doaj   +2 more sources

Enhance Reliability of Semiconductor Devices in Power Converters [PDF]

Electronics, 2020
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability.
Minh Hoang Nguyen, Sangshin Kwak
openaire   +3 more sources

Review on the Thermal Models Applications in the Reliability of Power Semiconductor Device

IET Power Electronics
The power semiconductor device plays a key role in energy conversion and management, and the failure of the device would make a great economic loss.
Jun Zhang, Huixian Shen, Haiyan Sun, Zhihuan Wang   +3 more
doaj   +2 more sources

Peanut Defect Identification Based on Multispectral Image and Deep Learning

Agronomy, 2023
To achieve the non-destructive detection of peanut defects, a multi-target identification method based on the multispectral system and improved Faster RCNN is proposed in this paper.
Yang Wang, Zhao Ding, Jiayong Song, Zhizhu Ge, Ziqing Deng, Zijie Liu, Jihong Wang, Lifeng Bian, Chen Yang   +8 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
doaj   +1 more source

First-principles study on the electronic structure and catalytic properties of two-dimensional MX2N4 systems (M = Ti, Zr; X = Si, Ge)

Results in Physics, 2023
Recently, the two-dimensional MA2Z4 family with a seven-atom layer structure (experimentally synthesized a MoSi2N4 monolayer), which has good stability and exhibits semiconductivity, providing a platform for photocatalytic hydrolysis studies of two ...
Yi Wang, Guang Wang, Mengya Huang, Zhengli Zhang, Jihong Wang, Ding Zhao, Xiang Guo, Xuefei Liu   +7 more
doaj   +1 more source

WBG-Based PEBB Module for High Reliability Power Converters

IEEE Access, 2021
The increasing presence of power electronic converters in the modern world – from electric vehicles, up to industrial applications – brings up concerns about their reliability, especially in the case of the Wide Band-Gap (WBG) devices ...
Sebastian Baba, Serafin Bachman, Marek Jasinski, Marcin Zelechowski   +3 more
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Materials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +3 more
doaj   +1 more source

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

IEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni   +4 more
doaj   +1 more source

High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates [PDF]

, 2000
The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form
Ponomarev, Youri V., Salm, Cora, Schmitz, Jurriaan, Stolk, Peter A., Woerlee, Pierre H.   +4 more
core   +8 more sources