Results 51 to 60 of about 86,995 (199)

Device reliability challenges for modern semiconductor circuit design – a review [PDF]

Advances in Radio Science, 2009
Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window.
C. Schlünder
doaj  

Switching-Cell Arrays - An Alternative Design Approach in Power Conversion [PDF]

, 2018
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting /republishing this material for advertising or promotional purposes, creating new ...
Busquets Monge, Sergio, Caballero Díaz, Luis   +1 more
core   +2 more sources

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Journal of Information Display
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park   +5 more
doaj   +1 more source

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Electronics Letters, 2023
The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper.
Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang   +3 more
doaj   +1 more source

Characterization of High Temperature Optocoupler for Power Electronic Systems [PDF]

, 2019
High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of
Gonzalez, David
core   +2 more sources

Metal surface passivation in semiconductor processing of Mo, W, TiN/TiSiN, and Cu: emerging strategies for corrosion and etching control

Materials & Design
Wet cleaning, a critical step in semiconductor manufacturing, is essential for device reliability but can induce metal corrosion due to the aggressive chemical solutions used, becoming a primary cause of yield degradation.
Yejin Lee, Suyeon Bae, Jee Woo Kim, Byungjoon Kang, Sungmin Kim, Jina Kim, Insun Park, Kyu Young Hwang, Byung-Kwon Kim   +8 more
doaj   +1 more source

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

, 2010
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs.
Bersuker, Gennadi, Bijesh, R., Deora, Shweta, Huang, Jeff, Jammy, Raj, Klimeck, Gerhard, Krisch, P. D., Paul, Abhijeet   +7 more
core   +1 more source

On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]

, 2009
A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E., Reimann, K., Schmitz, J., Tiggelman, M.P.J., Van Rijs, F.   +4 more
core   +3 more sources

A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty

IET Power Electronics
Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu, Boyuan Xu, Lan Xiao, Qin Wang   +3 more
doaj   +1 more source

An improved method for obtaining a normalized junction temperature for semiconductors: A concept [PDF]

, 1973
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining ...
Trivedi, S. N.
core   +1 more source