Results 291 to 300 of about 161,989 (332)
Some of the next articles are maybe not open access.
Reliability of semiconductor devices for submarine-cable systems
Proceedings of the IEEE, 1974The Bell System initiated development of semiconductor devices for use in broad-band repeatered coaxial submarine-cable telephone systems in the early 1960's. Development of such devices has continued at varying levels of activity to this date. Now, over a decade later, more than five years of successful operational life have elapsed on the first ...
openaire +2 more sources
Reliability certification of semiconductor devices using Goldthwaite diagrams
SPIE Proceedings, 2000Beginning at observation that if a Goldthwaite diagram is draw a line (lambda) equals constant, all the curves of this diagrams are cutes in a point that are a value equal with that constant. If the constant is choose the maximum admissible value of failure rate multiplied by time of qualified life, the intersection of (lambda) line with the different (
Sever Irin Spanulescu +2 more
openaire +2 more sources
Reliability results on electron bombarded semiconductor power devices
IEEE Transactions on Electron Devices, 1977A number of pulse and CW EBS power amplifiers have undergone extended life test. No failures have been recorded in over 180 000 test hours on eight CW devices, and one failure occurred in 90 000 test hours on eight pulsed devices.
R. True, D.J. Bates
openaire +2 more sources
The Design and Evaluation of Reliable Plastic-Encapsulated Semiconductor Devices
8th Reliability Physics Symposium, 1970A summary of the proposed conditions for control or evaluation of each feature of a design for a plastic-encapsulated device is as follows: 1. Screening and life testing for siliconchip surface problems, with high confidence of achieving the required reliability and with reasonable times, requires junction temperatures of the order of 175-300C, with ...
openaire +2 more sources
Noise analysis study of semiconductor devices for reliability improvement
Microelectronics Reliability, 1978Abstract Semiconductor devices like transistors, diodes and ICs have some characteristic electrical noise property. At low frequency, this is of a “1/f” type. Devices with defects in the surface region show more noise signal than the normally good devices. This has been observed in the experiments conducted using the Quan-Tech Noise Analyzer.
openaire +2 more sources
Reliability Analysis of the Gradual Degradation of Semiconductor Devices.
1983Abstract : A review of the recent results on accelerated aging of both power and low-noise GaAs FETs indicates that the major failure mode occurs by gradual deterioration and not by the usually (implicity) assumed catastrophic device failure. It is shown that assuming catastrophic degradation when devices actually fail gradually can lead to incorrect ...
openaire +2 more sources
Reliability of wide bandgap semiconductor power switching devices
Proceedings of the IEEE 2010 National Aerospace & Electronics Conference, 2010Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
openaire +2 more sources
Sequence test method for reliability evaluation of semiconductor devices
Microelectronics Reliability, 1981Abstract The failure-rate λ, of a device can be determined using Arrhenius model λ = A e −E KT . The number of thermal cycles a device can withstand can be postulated using an exponential model, N = g e−aT. Based on these models, a “sequence” process of thermal-fatigue and life tests is arrived at, which makes use of a mathematical ...
openaire +2 more sources
The Reliability of Semiconductor Devices: An Overview
Proceedings of the 6th International Conference on Optimization of Electrical and Electronic Equipments, 2005openaire +2 more sources