Results 291 to 300 of about 86,576 (325)

Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
A. Silzars, D.J. Bates, A. Ballonoff, G. Taylor   +3 more
openaire   +1 more source

Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
openaire   +1 more source

A reliability appraisal of semiconductor devices

Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1959
The current problems of assessing the reliability of semiconductor devices are discussed, and reference is made to the order of reliability required in typical applications.The evidence from life tests carried out on devices drawn from production lines of transistors and diodes shows how variations in operating conditions and assessment levels affect ...
R. Brewer, W.W.D. Wyatt
openaire   +1 more source

Reliability of semiconductor devices

Physics in Technology, 1976
Report on Metallization systems for semiconductor devices, 13 February 1976 Imperial College, London.
openaire   +1 more source

Reliability assessment of power semiconductor devices

2016 19th International Symposium on Electrical Apparatus and Technologies (SIELA), 2016
This paper concerns some issues related to failures that occurred in power semiconductor devices. A review of basic requirements aimed at normal and reliable operation of semiconductor components is done by using reliability prediction approaches and prognostic methods.
Anton Georgiev, Toncho Papanchev, Nikolay Nikolov   +2 more
openaire   +1 more source

Durability and Reliability of Semiconductor Devices

MRS Proceedings, 1998
AbstractThe aim of the study is to discuss the most general aspects of semiconductor devices durability and reliability. The life time of a semiconductor device is related to the defect structure evolution of the crystalline and noncrystalline components involved.
V. G. Sidorov, V. I. Sokolov, D. V. Sidorov   +2 more
openaire   +1 more source

Semiconductor Device Reliability

1989
I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of ...
openaire   +1 more source

Improved Semiconductor Device Reliability from Plasma Dicing

2019 International Wafer Level Packaging Conference (IWLPC), 2019
There are many emerging applications where die strength is critically important, most notably in harsh automotive environments, but also in other areas such as consumer wearables or remote sensing. Plasma dicing using a dry, chemically-driven etch has been introduced into production applications as a viable alternative to traditional methods of wafer ...
R. Barnett, Janet Hopkins, Stewart Fulton, Oliver Ansell, Samira Kazemi, Matthew Day   +5 more
openaire   +1 more source

Status of Compound Semiconductor Device Reliability

1990
A review is made of compound semiconductor device reliability from the period 1980 to the present. Emphasis is placed on technology based on field effect transistors (FETs). Many reliability studies were made of small signal GaAs FETs in the 1970s and of GaAs power FETs in the 1980’s; a substantial reliability base exists for these devices.
W. T. Anderson, A. Christou
openaire   +1 more source

Building reliability monitors for power semiconductor devices

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2002
Statistical analyses were used to build an efficient reliability monitor for power semiconductor devices. Benefits for the device manufacturing are obtained.
L. Galateanu, C. Tibeica, F. Turtudau
openaire   +1 more source