Results 301 to 310 of about 86,576 (325)

Reliability Testing of Semiconductor Devices in a Humid Environment

Journal of the IEST, 1993
The influence of humidity on semiconductor device reliability is investigated with two main purposes: to emphasize the role of humidity in the failure process as a stress factor and to model the reliability-humidity relationship. Experiments were performed on two types of plastic encapsulated semiconductor devices (optoelectronic and ICs).
M. Bazu, M. Tazlauanu
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Reliability prediction modeling of semiconductor light emitting device

IEEE Transactions on Device and Materials Reliability, 2003
This paper presents a probabilistic-approach-based reliability prediction model of semiconductor light emitting devices. Using this model with given initial light-emitting performance and degradation behavior otherwise determined by experiment, the reliability function of the devices is obtained, and the results correlate well with experimental results.
null Jingsong Xie, M. Pecht
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Reliability analysis of electrical engineering power semiconductor devices

Russian Electrical Engineering, 2016
A new approach to predicting reliability indices based on the numerical analysis of nonuniform temperature fields of power semiconductor devices (PSDs) is presented. Thermal analysis of the power diode module is carried out in a two-dimensional formulation with junction temperature Tjunc = 125°C.
G. V. Kuznetsov, E. V. Kravchenko, N. A. Pribaturin   +2 more
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Reliability Issue in Compound Semiconductor Heterojunction Devices

1998
The failure mechanisms affecting electron devices based on compound semiconductors are reviewed.
FANTINI, Fausto, BORGARINO, Mattia, L. CATTANI, P. COVA, R. MENOZZI, G. SALVIATI, C. CANALI, G. MENEGHESSO, E. ZANONI   +8 more
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Reliability physics study for semiconductor-polymer device development

Microelectronics Journal, 2003
Abstract We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications.
Dyanna G.D. Teixeira, Jane M.G. Laranjeira, Elder A. de Vasconcelos, Eronides F. da Silva, Walter M. de Azevedo, Helen J. Khoury   +5 more
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Testing for Reliability Qualification of Semiconductor Memory Devices

16th International Reliability Physics Symposium, 1978
This presentation describes the essence of the reliability qualification program and procedures which have evolved since we first started designing semiconductor memory systems in 1970. The goal for the program is to determine and maintain the reliability of the semiconductor memory devices and systems over their whole life.
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Reliability Testing of Semiconductor Optical Devices

2012
Reliability of semiconductor optical devices used in recent systems and equipment is described from an aspect of the degradation mechanisms observed on various reliability tests. The degradation mechanisms clarified for last three decades still govern the device reliability in recent systems and equipment.
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Instrumentation for Innovative Semiconductor Power Devices Reliability Tests

International Journal of Engineering and Industries, 2013
An automated system, designed to perform innovative reliability tests on semiconductor power devices, is reported. Hardware and software modules have been specifically developed for the demonstration of the proposed methodology. Both High Temperature Reverse Bias (HTRB) and Electrical Characterization Test (ECT) are executed by the system on power ...
Giuseppe Consentino, J. L. Hernandez Ambato, Donatella De Pasquale, Calogero Pace   +3 more
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Reliability certification of semiconductor devices using Goldthwaite diagrams

SPIE Proceedings, 2000
Beginning at observation that if a Goldthwaite diagram is draw a line (lambda) equals constant, all the curves of this diagrams are cutes in a point that are a value equal with that constant. If the constant is choose the maximum admissible value of failure rate multiplied by time of qualified life, the intersection of (lambda) line with the different (
Floarea Baicu, Sever I. Spanulescu, Anca E. Gheorghiu   +2 more
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Reliability of semiconductor devices - The need for simulation

2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011
Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates.
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