Results 91 to 100 of about 372,122 (281)

Integrated Four-Wavelength DFB Diode Laser Array for Continuous-Wave THz Generation

IEEE Photonics Journal, 2016
We demonstrate a four-wavelength distributed feedback (DFB) diode laser array integrated with a semiconductor optical amplifier (SOA) for widely tunable terahertz (THz) mode-beating generation. The InP-based monolithically integrated chip consists of DFB
Mengdie Sun, Shaoyang Tan, Fei Guo, Songtao Liu, Qiang Kan, Dan Lu, Ruikang Zhang, Wu Zhao, Song Liang, Wei Wang, Ronald Broeke, Francisco. M. Soares, Chen Ji   +12 more
doaj   +1 more source

The Effects of Protons on Semiconductor Devices [PDF]

, 1962
Proton bombardment on transistor circuits at 40 and 440-mev in radiation ...
Honaker, W. C.
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation

Crystals
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu, Songyuan Song, Zeyang Ren, Liaoliang Zhu, Jinfeng Zhang, Kai Su, Junfei Chen, Tao Zhang, Weidong Zhu, Junpeng Li, Weidong Man, Yue Hao, Jincheng Zhang   +12 more
doaj   +1 more source

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

Nanoscale Research Letters, 2017
The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post ...
Xing-Yao Feng, Hong-Xia Liu, Xing Wang, Lu Zhao, Chen-Xi Fei, He-Lei Liu   +5 more
doaj   +1 more source

Spin Hall effect transistor

, 2010
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies.
A. C. Irvine, B.-G. Park, Bernevig, Crooker, E. Rozkotova, Garlid, Hammar, Huang, J. Sinova, J. Wunderlich, Jiang, Koo, L. P. Zarbo, P. Nemec, Schliemann, Sinova, T. Jungwirth, V. Novak, Valenzuela, Weber, Wunderlich, Zhu   +21 more
core   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Effects of Finite Deformed Length in Carbon Nanotubes

, 2003
The effect of finite deformed length is demonstrated by squashing an armchair (10,10) single-walled carbon nanotube with two finite tips. Only when the deformed length is long enough, an effectual metal-semiconductor-metal heterojunction can be formed in
Duan, Wenhui, Gu, Bing-Lin, Lu, Jun-Qiang, Wu, Jian   +3 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source