Metrology for the next generation of semiconductor devices. [PDF]
Orji NG +9 more
europepmc +1 more source
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi +7 more
wiley +1 more source
Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential. [PDF]
Wostatek T +5 more
europepmc +1 more source
Erratum: Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Corrigendum]. [PDF]
europepmc +1 more source
Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku +18 more
wiley +1 more source
On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene, and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices. [PDF]
Gudjonsdottir S +5 more
europepmc +1 more source
Switchable Thermal Mid‐IR Conducting Polymer Antenna Arrays
This study presents switchable mid‐infrared plasmonic resonances in PEDOT antenna arrays. Their optical extinction peaks can be reversibly switched ‘OFF’ and ‘ON’ by tuning the polaronic charge carrier concentration via the polymer's redox state, offering modulation of optical responses in the thermal mid‐infrared range including around 10 µm ...
Pravallika Bandaru +5 more
wiley +1 more source
Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo +10 more
wiley +1 more source
A design TCADAS tool for semiconductor devices and case study of 65 nm conventional floating-gate MOS transistor. [PDF]
Dang Cong T, Hoang T.
europepmc +1 more source
Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.
Dai M +7 more
europepmc +1 more source

