Results 161 to 170 of about 367,607 (262)

Metrology for the next generation of semiconductor devices. [PDF]

open access: yesNat Electron, 2018
Orji NG   +9 more
europepmc   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

open access: yesAdvanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi   +7 more
wiley   +1 more source

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential. [PDF]

open access: yesMaterials (Basel)
Wostatek T   +5 more
europepmc   +1 more source

Tin‐Oxo Nanocluster Extreme UV Photoresists Equipped with Chemical Features for Atmospheric Stability and High EUV Sensitivity

open access: yesAdvanced Functional Materials, EarlyView.
Fluoroalkyl‐functionalized tin–oxo nanoclusters (N‐TOC6) enable robust pattern formation through ligand crosslinking under EUV exposure without thermal processing. Sn–F coordination mitigates the Lewis acidity of Sn centers, suppressing reactions with airborne molecules and improving post‐exposure pattern stability.
Yejin Ku   +18 more
wiley   +1 more source

Switchable Thermal Mid‐IR Conducting Polymer Antenna Arrays

open access: yesAdvanced Functional Materials, EarlyView.
This study presents switchable mid‐infrared plasmonic resonances in PEDOT antenna arrays. Their optical extinction peaks can be reversibly switched ‘OFF’ and ‘ON’ by tuning the polaronic charge carrier concentration via the polymer's redox state, offering modulation of optical responses in the thermal mid‐infrared range including around 10 µm ...
Pravallika Bandaru   +5 more
wiley   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

open access: yesAdvanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo   +10 more
wiley   +1 more source

Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.

open access: yesInt J Nanomedicine, 2020
Dai M   +7 more
europepmc   +1 more source

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