Results 21 to 30 of about 367,607 (262)
Engineering Reports, 2022 Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan +3 more
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Quantum Information Processing and Entanglement in Solid State Devices [PDF]
, 2004 Control over electron-spin states, such as coherent manipulation, filtering and measurement promises access to new technologies in conventional as well as in quantum computation and quantum communication.
Kawabata, Shiro
core +1 more source
Nanoscale Research Letters, 2018 In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 μm was fabricated through a standard buried first-order grating and ...
Dong-Bo Wang +10 more
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Nanomaterials, 2023 The traditional Ag nanowire preparation means that it cannot meet the demanding requirements of photoelectrochemical devices due to the undesirable conductivity, difficulty in compounding, and poor heat resistance.
Menghan Liu +9 more
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Anomalous Mode Transitions in High Power Distributed Bragg Reflector Quantum Cascade Lasers
Nanoscale Research Letters, 2019 In this paper, an anomalous spectral data of distributed Bragg reflector (DBR) quantum cascade lasers (QCLs) emitting around 7.6 μm is presented. The two-section DBR lasers, consisting of a gain section and an unpumped Bragg reflector, display an output ...
Feng-Min Cheng +10 more
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Nanoscale Research Letters, 2019 High-power, low-threshold stable single-mode operation buried distributed feedback quantum cascade laser by incorporating sampled grating emitting at λ ~ 4.87 μm is demonstrated.
Feng-Min Cheng +10 more
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Multiport semiconductor devices [PDF]
, 1970 Device, made of a variety of semiconductors, incorporates three or more terminals. Between at least two terminals, switching action occurs. The other terminal pair performs either another switching function or a control function.
Holmstrom, F. R., Rindner, W.
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Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices [PDF]
, 1982 Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar ...
Bar-Chaim, Nadav +7 more
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates
Nature CommunicationsThe self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Jing Ning +9 more
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