Results 51 to 60 of about 367,607 (262)

Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers [PDF]

open access: yes, 1985
Semiconductor lasers are potentially devices of great importance for optical transmission as well as short pulse generation for various sampling, characteration and dispersion measurements.
Lau, K. Y., Yariv, A.
core  

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Room‐temperature quantum cascade laser packaged module at ∼8 μm designed for high‐frequency response

open access: yesElectronics Letters, 2021
A high‐speed, room‐temperature quantum cascade laser packaged module emitting at 8.14 μm is presented. The cavity length of the laser is as small as 0.5 mm, and the threshold current at 298 K is 110 mA.
Ke Yang   +7 more
doaj   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

Semiconductor cooling by thin-film thermocouples [PDF]

open access: yes, 1970
Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist ...
Tick, P. A., Vilcans, J.
core   +1 more source

Parity lifetime of bound states in a proximitized semiconductor nanowire [PDF]

open access: yes, 2015
Quasiparticle excitations can compromise the performance of superconducting devices, causing high frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics
Albrecht, S. M.   +9 more
core   +2 more sources

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

open access: yesAdvanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich   +6 more
wiley   +1 more source

Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D [PDF]

open access: yesЖурнал нано- та електронної фізики, 2014
The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge).
Benmoussa Dennai   +2 more
doaj  

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

open access: yesNanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen   +5 more
doaj   +1 more source

The Effects of Protons on Semiconductor Devices [PDF]

open access: yes, 1962
Proton bombardment on transistor circuits at 40 and 440-mev in radiation ...
Honaker, W. C.
core   +1 more source

Home - About - Disclaimer - Privacy