Results 61 to 70 of about 372,122 (281)

Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D [PDF]

open access: yesЖурнал нано- та електронної фізики, 2014
The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge).
Benmoussa Dennai   +2 more
doaj  

Design and fabrication of highly efficient non-linear optical devices for implementing high-speed optical processing [PDF]

open access: yes, 2002
We present the design and fabrication of micro-cavity semiconductor devices for enhanced Two-Photon-Absorption response, and demonstrate the use of these devices for implementing sensitive autocorrelation measurements on pico-second optical ...
Barry, Liam P.   +7 more
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Investigation of monocrystalline silicon surface texturization by image processing program

open access: yesRevue des Énergies Renouvelables, 2022
One of the main issues in the photovoltaic industry of silicon solar cells is the optical losses via reflection. To overcome this issue, texturization (chemical etching) remains the most commonly used method to produce a random pyramid structure to ...
Abdellah Trad khodja   +4 more
doaj   +1 more source

Vertical field-effect transistors in III-V semiconductors [PDF]

open access: yes, 1984
Vertical metal-semiconductor field-effect transistors in GaAs/GaAlAs and vertical metal-oxide-semiconductor field-effect transistors (MOSFET's) in InP/GaInPAs materials have been fabricated.
Kapon, E.   +5 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Room‐temperature quantum cascade laser packaged module at ∼8 μm designed for high‐frequency response

open access: yesElectronics Letters, 2021
A high‐speed, room‐temperature quantum cascade laser packaged module emitting at 8.14 μm is presented. The cavity length of the laser is as small as 0.5 mm, and the threshold current at 298 K is 110 mA.
Ke Yang   +7 more
doaj   +1 more source

Radiation Resistant Silicon Semiconductor Devices-Patent [PDF]

open access: yes, 1970
Improving radiation resistance of silicon semiconductor junctions by doping with ...
Wysocki, J. J.
core   +1 more source

Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices

open access: yes, 2014
Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via ...
Rastelli, Armando   +4 more
core   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

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