Results 51 to 60 of about 123,224 (272)

Polarization resolved four-wave-mixing-based measurement in bulk material semiconductor optical amplifier [PDF]

, 2006
The anticipated growth in demand for bandwidth leads to the development of all-optical signal processing techniques at ever increasing data rates. One possible candidate to achieve the required performance is the semiconductor optical amplifier (SOA). It
S. Philippe, B. Kennedy, Philippe, Severine, Surre, Frederic, Kennedy, Brendan F., Bradley, Ann Louise, A. Bradley, Landais, Pascal, F. Surre, P. Landais   +9 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Simulation of Tunnel Junction in Cascade Solar Cell (GaAs/Ge) Using AMPS-1D [PDF]

Журнал нано- та електронної фізики, 2014
The development of the tunnel junction interconnect was key the first two-terminal monolithic, multi-junction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge).
Benmoussa Dennai, H. Ben Slimane, A. Helmaoui   +2 more
doaj  

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design

, 2022
As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies.
Nasiri, Aryanaz Faghih, Mohammadreza Kolahdouz, Buqing Xu, Kolahdouz, Mohammadreza,, Wu, Yuanyuan, Radamson, Henry H., Manian, Mahmoud,, Aghababa, Hossein, Mahmoud Manian, Nasiri, Aryanaz Faghih,, Hossein Aghababa, Yuanyuan Wu, Aryanaz Faghih Nasiri, Aghababa, Hossein,, Wu, Yuanyuan,, Xu, Buqing, Radamson, Henry H.,, Xu, Buqing,, Manian, Mahmoud, Kolahdouz, Mohammadreza, Fathollahzadeh, Maryam,, Fathollahzadeh, Maryam, Maryam Fathollahzadeh, Henry H. Radamson   +23 more
core   +1 more source

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Nanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong   +5 more
doaj   +1 more source

Room‐temperature quantum cascade laser packaged module at ∼8 μm designed for high‐frequency response

Electronics Letters, 2021
A high‐speed, room‐temperature quantum cascade laser packaged module emitting at 8.14 μm is presented. The cavity length of the laser is as small as 0.5 mm, and the threshold current at 298 K is 110 mA.
Ke Yang, Junqi Liu, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Lijun Wang, Shuman Liu, Fengqi Liu   +7 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source