Results 61 to 70 of about 123,224 (272)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Development of a prototype photoacoustic microscope and spectroscope and advanced semiconductor material characterization [PDF]

open access: yes, 2012
The thesis can be divided into two parts. In the first part of my thesis, I present the design, construction and test results of a prototype gas-cell Photoacoustic (PA) Spectrometer and Microscope. It is a low cost, non-contact technique, which can
Xu, Lu, Xu, L.
core  

Wave-mixing analysis for THz-signals generation in dc-biased semiconductor optical devices at room temperature [PDF]

open access: yes, 2010
Wave-mixing at 370-GHz in a SOA and FP semiconductor laser is investigated by using a FROG-system. A comparison of the optical time-fluctuations measured at their output stresses the importance of a resonant cavity in THz-signals generation from ...
Frederic Surre   +7 more
core   +1 more source

Generating structures in the form of GIS with micromechanics elements

open access: yesТехнологія та конструювання в електронній апаратурі, 2004
The possibility of using micromechanical tuning elements in the creation of generating structures based on Gunn diodes (GD) has been demonstrated.
V. I. Yurchenko, S. D. Votoropin
doaj  

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Radiation damage in charge coupled devices [PDF]

open access: yes, 2003
This thesis was submitted for the degree of Doctor of Philosophy and awarded by the University of Leicester.This thesis is concerned with the effects of radiation damage in CCDs used for space applications.
David Ryan. Smith (7660436)   +1 more
core  

Optical signal processing via two-photon absorption in a semiconductor microcavity for the next generation of high-speed optical communications network [PDF]

open access: yes, 2006
Due to the introduction of new broadband services, individual line data rates are expected to exceed 100 Gb/s in the near future. To operate at these high speeds, new optical signal processing techniques will have to be developed.
Guo, Wei Hua   +17 more
core   +1 more source

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

open access: yesNanoscale Research Letters, 2017
La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing ...
Xing Wang   +6 more
doaj   +1 more source

Toward Tunable Magnetic Dirac Semimetals: Mn Doping of Cd3As2

open access: yesAdvanced Functional Materials, EarlyView.
Dilute magnetic doping of topological semimetals offers a pathway to tune the topological phase via time reversal symmetry breaking. This is achieved by alloying the Dirac semimetal Cd3As2 with Mn via molecular beam epitaxy. Magnetotransport measurements provide preliminary evidence of changes to the electronic structure consistent with the emergence ...
Anthony D. Rice   +10 more
wiley   +1 more source

Industrial application of atom probe tomography to semiconductor devices

open access: yes, 2018
Advanced semiconductor devices offer a metrology challenge due to their small feature size, diverse composition and intricate structure. Atom probe tomography (APT) is an emerging technique that provides 3D compositional analysis at the atomic-scale; as ...
Giddings, A.D.   +20 more
core   +1 more source

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