Results 1 to 10 of about 242,280 (338)

Simulation and Experimental Research on a Beam Homogenization System of a Semiconductor Laser [PDF]

Sensors, 2022
Aiming at the application of laser active imaging detection technology, this paper studied the beam homogenization system of a semiconductor laser based on a homogenizing pipe. Firstly, the principle of the homogenizing pipe was introduced. Secondly, the
Haijing Zheng, Huayan Sun, Huaili Zhang, Yingchun Li, Huichao Guo, Laixian Zhang, Rong Li, Qiang Yin   +7 more
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Terahertz semiconductor laser chaos [PDF]

Nature Communications
In the terahertz (THz) range, due to the lack of effective THz light sources, chaos generation in THz semiconductor lasers, e.g., quantum cascade lasers (QCLs), is particularly challenging.
Binbin Liu, Carlo Silvestri, Kang Zhou, Xuhong Ma, Shumin Wu, Ziping Li, Wenjian Wan, Zhenzhen Zhang, Ying Zhang, Junsong Peng, Heping Zeng, Cheng Wang, Massimo Brambilla, Lorenzo Luigi Columbo, Hua Li   +14 more
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Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Scientific Reports, 2021
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature ...
Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei   +9 more
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Plasma-activated direct bonding at room temperature to achieve the integration of single-crystalline GaAs and Si substrate

Results in Physics, 2021
We use a plasma-activated direct bonding process at room temperature to form heterostructures between GaAs and traditional Si substrates. The intermediate layer is not required at the bonding interface.
Rui Huang, Tian Lan, Chong Li, Zhiyong Wang   +3 more
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Review of Issues and Solutions in High-Power Semiconductor Laser Packaging Technology

Frontiers in Physics, 2021
In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing.
Yixiong Yan, Yu Zheng, Haigang Sun, Ji’an Duan   +3 more
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3D Simulation for Melt Laser Anneal Integration in FinFET’s Contact

IEEE Journal of the Electron Devices Society, 2020
Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool.
Toshiyuki Tabata, Benoit Curvers, Karim Huet, Soon Aik Chew, Jean-Luc Everaert, Naoto Horiguchi   +5 more
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Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO₂/Si₃N₄/GaAs Wafers by He⁺ and H⁺ Implantation

Crystals, 2020
The thermally activated blistering and exfoliation of GaAs wafers and SiO2/Si3N4/GaAs wafers after H+ and He+ implantation is systematically investigated.
Rui Huang, Tian Lan, Chong Li, Jing Li, Zhiyong Wang   +4 more
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Formation of metal–semiconductor nanowire heterojunctions by nanosecond laser irradiation

AIP Advances, 2021
Laser nano-joining has emerged as a preferred technique for better device performance as it can result in stronger mechanical contacts and enhance the electrical properties between nanocomponents.
Shuo Zheng, Walter W. Duley, Peng Peng, Y. Norman Zhou   +3 more
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Re-analysis of single-mode conditions for thin-film lithium niobate rib waveguides

Results in Physics, 2021
Single-mode waveguide devices are necessary in photonic integrated circuits. Previous studies on the single-mode conditions (SMCs) of the thin film lithium niobate (TFLN) either only focus on wire waveguide, or lack comprehensive discussions on the ...
Ying Li, Tian Lan, Dengcai Yang, Zhiyong Wang   +3 more
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Phase conjugate fluorozirconate fibre laser operating at 800nm [PDF]

, 1992
We report phase-conjugate feedback into a fluorozirconate optical fiber amplifier at infrared wavelengths. By using a semiconductor laser diode at 807 nm, a grating is established in photorefractive BaTiO3 that, in the ring configuration, provides ...
Carter, Cronin-Golomb, Daryl Szebesta, Graeme W. Ross, Jeremy N. Carter, Kogelnik, McMichael, Nielsen, Raman Kashyap, Ramsey, Robert W. Eason, Stephen W. James, Steven T. Davey   +12 more
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