Results 161 to 170 of about 68,086 (201)
Passively mode-locked diode-pumped surface-emitting semiconductor laser
IEEE Photonics Technology Letters, 2000 A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror ...
Sjoerd Hoogland +2 more
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Bidirectional Semiconductor Laser
Science, 1999A semiconductor laser capable of operating under both positive and negative bias voltage is reported. Its active region behaves functionally as two different laser materials, emitting different wavelengths, depending on the design, when biased with opposite polarities. This concept was used for the generation of two wavelengths (6.3 and 6.5 micrometers)
Gmachl C +5 more
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Journal of Applied Physics, 1980
The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by a Q-switched YAG laser operating at 1.064 μm. The round-trip loss in the Fabry-Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈
K. Suto, J. Nishizawa
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Chemical Reviews, 2007
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
I D W, Samuel, G A, Turnbull
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AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
I D W, Samuel, G A, Turnbull
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Semiconductor Interferometric Laser
Topical Meeting on Integrated and Guided-Wave Optics, 1982Wavelength control of semiconductor lasers is important in optical communication, where mode stability, tunability, and FM modulation are vital to high quality transmission. Numerous work had been done in optimizing stripe geometry lasers to achieve mode stability.
Ismail H. A. Fattah, Shyh Wang
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CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009
A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
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A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
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Proceedings of the IEEE, 1992
Recent research activities in the field of advanced semiconductor lasers are reviewed with emphasis on highly stable single-wavelength lasers and surface-emitting (SE) lasers for wideband lightwave communication systems and optical parallel information processing.
Yasuharu Suematsu +2 more
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Recent research activities in the field of advanced semiconductor lasers are reviewed with emphasis on highly stable single-wavelength lasers and surface-emitting (SE) lasers for wideband lightwave communication systems and optical parallel information processing.
Yasuharu Suematsu +2 more
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Semiconductor-laser endophotocoagulation of the retina
Conference on Lasers and Electro-Optics, 1986Laser endophotocoagulation is an important technique in vitreoretinal surgery. We performed successful retinal endophotocoagulation in the eyes of Dutch-belted rabbits, using high-power phased-array semiconductor lasers, emitting at 808 and 817 nm. The laser itself measured 25 X 30 X 21 mm, was air cooled, and was portable.
C A, Puliafito +3 more
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
openaire +2 more sources