Results 11 to 20 of about 219,128 (154)
Phase conjugate fluorozirconate fibre laser operating at 800nm [PDF]
, 1992 We report phase-conjugate feedback into a fluorozirconate optical fiber amplifier at infrared wavelengths. By using a semiconductor laser diode at 807 nm, a grating is established in photorefractive BaTiO3 that, in the ring configuration, provides ...
Carter +12 more
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Research of selective etching in LiNbO3 using proton-exchanged wet etching technique
Materials Research Express, 2020 Lithium niobate material (LN) has shown great application potentials in the fabrication of integrated optical devices due to its excellent physical properties, especially with the occurrence of lithium niobate-on-insulator (LNOI) substrate.
Ying Li +6 more
doaj +1 more source
Dispersion-induced dynamics of coupled modes in a semiconductor laser with saturable absorption [PDF]
, 2014 We present an experimental and theoretical study of modal nonlinear dynamics in a specially designed dual-mode semiconductor Fabry-Perot laser with a saturable absorber.
O'Brien, Stephen +2 more
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Picosecond Mode-Locking And X-Band Modulation Of Semiconductor Lasers [PDF]
, 1983 Recent developments in two areas of high speed semiconductor lasers will be addressed: (1) passive mode-locking of a segmented-contact semiconductor laser with a reliable, controllable saturable absorber which produces stable picosecond optical pulses ...
Harder, C., Lau, K., Yariv, A.
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Intensity noise reduction in semiconductor lasers by amplitude-phase decorrelation [PDF]
, 1990 Detuned operation of a laser results in coupling of field amplitude and phase fluctuations. In a semiconductor laser, this coupling is known to be very large.
Newkirk, Michael A., Vahala, Kerry J.
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Scientific Reports, 2017 Effect of charge carrier confinement and ultra-low disorder acquainted in AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence spectroscopy.
S. Haldar +6 more
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Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment
Nanoscale Research Letters, 2019 ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts ...
Haolin Li +8 more
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Hot Carrier Photocurrent through MOS Structure
Applied Sciences, 2021 Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character.
Jonas Gradauskas, Steponas Ašmontas
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Twisted-light-induced intersubband transitions in quantum wells at normal incidence [PDF]
, 2013 We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to
Quinteiro, G. F. +2 more
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The use of semiconductor laser diodes at low temperatures [PDF]
Vestnik MGTU, 2016 The theoretical analysis and experimental research of possibility of using commercially available semiconductor laser diodes at low temperatures (down to the temperature of 50 K) has been performed in the paper.
Vlasova S. V. +2 more
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