Results 191 to 200 of about 220,832 (286)
Two‐Dimensional Reconfigurable Photodiode for In‐Sensor Color Filtering and Spectral Logic
By harnessing the photodoping of different aggregates, the device exhibits wavelength‐dependent volatile‐to‐nonvolatile photoresponses that can be reconfigured via bias modulation. This enables in‐sensor color filtering and spectral‐encrypted information processing, eliminating reliance on external optical filters or post‐processing algorithms ...
Xiaokun Guo +7 more
wiley +1 more source
Publisher Correction: Measurement of the emission spectrum of a semiconductor laser using laser-feedback interferometry. [PDF]
Keeley J +11 more
europepmc +1 more source
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins +8 more
wiley +1 more source
Turbulent chimeras in large semiconductor laser arrays. [PDF]
Shena J +3 more
europepmc +1 more source
In this research, a simple and scalable strategy for protection of a few‐layer black phosphorus (FLBP) with a cellulose nitrate‐based material is presented. The FLBP is structurally and morphologically characterized. The FLBP stability with and without nitrocellulose protection is monitored by interferometric method, surface profile examination, and ...
Paweł Jakóbczyk +8 more
wiley +1 more source
Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen +9 more
wiley +1 more source
Light bullets in a time-delay model of a wide-aperture mode-locked semiconductor laser. [PDF]
Pimenov A +3 more
europepmc +1 more source
Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales +10 more
wiley +1 more source
This work presents an innovative spin‐on SiOx‐assisted inkjet‐printed approach to form localized n+ and p+ poly‐Si/SiOx passivating contacts for high‐efficiency silicon solar cells within a single‐annealing step. The developed process results in a well‐defined interdigitated doping pattern, with unintended doping and cross‐doping concentrations ...
Jiali Wang +8 more
wiley +1 more source
Ultra-Short Pulse Generation in a Three Section Tapered Passively Mode-Locked Quantum-Dot Semiconductor Laser. [PDF]
Meinecke S +5 more
europepmc +1 more source

