Results 71 to 80 of about 242,280 (338)
Spin-to-Orbital Angular Momentum Conversion in Semiconductor Microcavities [PDF]
, 2011 We experimentally demonstrate a technique for the generation of optical beams carrying orbital angular momentum using a planar semiconductor microcavity.
A. V. Kavokin +12 more
core +2 more sources
Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules
Advanced Functional Materials, EarlyView.A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang +7 more
wiley +1 more source
PhotonicsCompact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for laser pulse sources based on a vertical stack is proposed, which includes a semiconductor laser chip and a current switch chip.
Sergey Slipchenko +13 more
doaj +1 more source
MATEC Web of Conferences, 2017 In this paper, the development of loop mirror multi-wavelength Brillouin fiber laser utilizing semiconductor optical amplifier and fiber Bragg grating is successfully demonstrated. A multi-wavelength BFL structure employs a single mode fiber that acts as
Idris N. A. +5 more
doaj +1 more source
Generation of tuneable 589nm radiation as a Na guide star source using an optical parametric amplifier [PDF]
, 2015 We describe a 5.5W 589nm source based on a passively modelocked Nd:YVO4 laser and a multi-stage Lithium Triborate optical parametric amplifier seeded by a tuneable semiconductor laser.
Duering, M +2 more
core +1 more source
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing
, 2018 We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the ...
Aers, Geof C. +6 more
core +1 more source
Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride
Advanced Functional Materials, EarlyView.State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley +1 more source
Semiconductor Laser Multi-Spectral Sensing and Imaging
Sensors, 2010 Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging.
Han Q. Le, Yang Wang
doaj +1 more source
Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit [PDF]
, 1982 A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate.
Bar-Chaim, Nadav +3 more
core +1 more source